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BLX13C

Description
Trans GP BJT NPN 120V 2A
CategoryDiscrete semiconductor    The transistor   
File Size45KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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Trans GP BJT NPN 120V 2A

BLX13C Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown

BLX13C Preview

^E.mL-L-onau.ctor
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
., L>nc.
BLX13C
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
BLX13C
is Designed for
28 V, Linear Amplifier, class A and AB in
the HF and VHF bands.
FEATURES:
. P
G
= 21 dB Typical at 25 W/ 28 MHz
PACKAGE STYLE .380" 4L STUD
112x45-
r ~
Ll(
3
^\
0C-
Omnigoldl™
Metallization System
)
.
'j
JHJI
I
J
MAXIMUM RATINGS
Ic
VCE
VCB
PDISS
#8-32 UN C-2A --' " '
-
j
MINIMUM
220 / 5 59
.980/24.89
370
19
40
D
E
F
G
H
G
3.0 A
36 V
65 V
7 3 W @ T
c = 25 °C
Dl
E -
MAXIMUM
230/5,84
385/978
.007/0.18
330/838
.130/3.30
490/1245
.100/254
.175/4.45
.750/1905
004/0.10
. 3 2 0 / 8 13
,100/2.54
450 / 11 43
,090/2.29
155/394
Tj
TSTG
-65 °C to
+200 °C
-65 °C to +150 °C
2.39 °C/W
1
J
6
JC
CHARACTERISTICS
SYMBOL
BV
CES
BVCEO
BV
EBO
ICES
l
c
=10mA
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
65
36
4.0
V
V
V
4.0
100
50
l
c
= 50 mA
IE = 10mA
VCB = 36 V
VCE = 5.0 V
VCB = 28 V
l
c
= 1 .25A
f = 1 .0 MHz
h
FE
C
0
b
10
mA
..
.
PF
dB
%
PG
V
CE
= 28 V
POUT = 25 W
f = 28 MHz
21
45
n
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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