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BAT38MP

Description
Mixer Diode, KA Band, Silicon,
CategoryDiscrete semiconductor    diode   
File Size32KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BAT38MP Overview

Mixer Diode, KA Band, Silicon,

BAT38MP Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionO-CXMW-X2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresMATCHED PAIR
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKA BAND
JESD-30 codeO-CXMW-X2
Number of components1
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED

BAT38MP Preview

BAT38
SILICON SCHOTTKY BARRIER DIODE
DESCRIPTION:
The
ASI BAT38
is a silicon Schottky
barrier mixer diode, Designed for use
in Ka frequency band Applications.
PACKAGE STYLE
FEATURES INCLUDE:
Low R
S
5.0Ω
Low NF 8.5 Db Typ.
Frequency Range 26 to 40 GHz
Available as Matched pairs by adding
the MP to the part number. Matching
criteria is
±
10% on rectified current
and within 150
i.f. impedance.
__
MAXIMUM RATINGS
V
R
P
DISS
T
J
T
STG
2.0 V
250 mW @ T
C
= 25 °C
-55 °C to +100 °C
-55 °C to +100 °C
CHARACTERISTICS
SYMBOL
V
R
V
F
I
F
I
R
C
T
NF
I
R
= 10
µA
I
F
= 1.0 mA
V
F
= 0.5 V
V
R
= 0.5 V
V
R
= 0 V
I
F
= 0.5 mA
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL
2.0
MAXIM
0.29
UNITS
V
V
mA
µA
pF
dB
2.0
2.0
f = 1.0 MHz
f = 30 GHz
.27
6.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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