,
L/
, U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
BLV32F
is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters.
FEATURES:
• Diffused emitter ballasting resistors
• P
G
= 16dBat10W/224MHz
•
Omnigold™
Metalization System
PACKAGE STYLE .500 6L FLG
MAXIMUM
TF:
lbO/4,06
MAXIMUM RATINGS
Ic
VCBO
VCEO
VCES
VEBO
PDISS
4.0 A
60V
32V
60V
4.0V
82 W @ T
C
= 25°C
-65 °C to +200 °C
-65°Cto+150°C
L™
Tj
TSTG
e
JC
2.1 °C/W
1= Collector 2= Base 3 and 4= Emitter
CHARACTERISTICS
T
c
-25°c
SYMBOL
BV
CEO
BVCES
BV
EBO
ICES
l
c
= 100mA
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
32
60
4.0
5.0
l
c
= 1 .6 A
f = 1 .0 MHz
POUT = 1 0 W
f = 224 MHz
V
V
V
120
50
lc= 15mA
IE = 10mA
V
CE
= 32 V
V
CE
= 25 V
V
CB
= 25 V
VCE = 25 V
h
FE
C
c
PG
20
mA
..
.
PF
dB
16
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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