DATA SHEET
INTEGRATED LOAD SWITCH
µ
PA1981
N-CHANNEL/P-CHANNEL MOS FET PAIR
FOR LOAD SWITCH
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
power management in portable electronic equipment where 2.5 to 8 V
This load switch integrated a small N-Channel MOS FET (Q1), which
drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).
2.8 ±0.2
0.65
–0.15
The
µ
PA1981 is a N-Channel/P-Channel MOS FET pair for compact
input and 2.8 A output current capability are needed.
0.32
+0.1
–0.05
+0.1
0.16
+0.1
–0.06
1.5
0 to 0.1
•
V
S2D2
1 = 0.2 V MAX. (V
S2S1
= 5.0 V, I
D2
=
−2.8
A, R
D2S2(on)
1 = 70 mΩ)
•
V
S2D2
2 = 0.2 V MAX. (V
S2S1
= 2.5 V, I
D2
=
−1.9
A, R
D2S2(on)
2 = 105 mΩ)
1.9
2.9 ±0.2
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
µ
PA1981TE
Marking:
TZ
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Source2 to Source1 Input Voltage Range
Gate1 to Source1 On Voltage Range
Drain2 Current (DC)
Note1
Note2
Note1
PIN CONNECTION (Top View)
2.5 to 8.0
1.5 to 7.0
−2.8
−10.0
1.0
150
−55
to +150
V
V
A
A
W
°C
°C
1
2
3
6
5
4
1. S1(Q1)
2. D2(Q2)
3. D2(Q2)
4. S2(Q2)
5. G1(Q1)
6. G2/D1
V
S2S1
V
G1S1
I
D2(DC)
I
D2(pulse)
P
T
T
ch
T
stg
Drain2 Current (pulse)
Channel Temperature
Storage Temperature
Total Power Dissipation
2
Notes 1.
Mounted on FR-4 Board of 2500 mm x 1.6 mm, t
≤
5 sec
2.
PW
≤
10
µ
s, Duty Cycle
≤
1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17263EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
0.4
FEATURES
0.95
0.95
0.65
2004
µ
PA1981
TYPICAL CHARACTERISTICS (T
A
= 25°C)
ON-STATE VOLTAGE (Pch) vs.
DRAIN2 CURRENT
ON-STATE VOLTAGE (Pch) vs.
CHANNEL TEMPERATURE
0.20
V
S2D2
- On-state Voltage (Pch) - V
V
S2D2
- On-state Voltage (Pch) - V
0.20
T
ch
= 125°C
0.16
0.12
0.08
0.04
0
0
-0.5
-1
0.16
0.12
0.08
0.04
0
T
ch
= 125°C
25°C
25°C
Pulsed
V
S2S1
= 5.0 V
V
G1S1
= 1.5 to 7.0 V
-1.5
-2
-2.5
-3
Pulsed
V
S2S1
= 2.5 V
V
G1S1
= 1.5 to 7.0 V
0
-0.5
-1
-1.5
-2
-2.5
-3
I
D2
- Drain2 (Pch) Current - A
ON-STATE RESISTANCE (Pch) vs.
INPUT VOLTAGE
I
D2
- Drain2 (Pch) Current - A
ON-STATE RESISTANCE (Pch) vs.
CHANNEL TEMPERATURE
12
R
D2S2(on)
- Static On-Resistance - mΩ
R
D2S2(on)
- Static On-Resistance - mΩ
14
Pulsed
I
D2
=
−2.8
A
V
G1S1
= 1.5 to 7.0 V
10
8
6
4
2
0
1
2
3
4
12
10
8
6
4
2
0
Pulsed
V
G1S1
= 1.5 to 7.0 V
V
S2S1
= 2.5 V
I
D2
=
−1.9
A
V
S2S1
= 5.0 V
I
D2
=
−2.8
A
5
6
7
8
-50
-25
0
25
50
75
100 125 150
V
S2S1
- Source2 to Source Input Voltage - V
T
ch
- Channel Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th
- Transient Thermal Resistance -
°C/W
100
10
1
Single pulse
Mounted on FR-4 board of 2500 mm
2
x 1.6 mm
0.1
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet G17263EJ1V0DS
3
µ
PA1981
•
The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
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