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BLX14

Description
RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size13KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BLX14 Overview

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN,

BLX14 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionPOST/STUD MOUNT, O-CRPM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-based maximum capacity125 pF
Collector-emitter maximum voltage36 V
ConfigurationSingle
Minimum DC current gain (hFE)15
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)88 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

BLX14 Preview

BLX14
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLX14
is Designed for HF
and VHF band applications.
PACKAGE STYLE .500 4L STUD (A)
.112 x 45°
A
Ø .630 NOM
C
E
E
D
FEATURES:
P
G
= 13 dB min. at 15 W/1.6 MHz
d
3
= -40 dB typ. at 15 W
(PEP)
Omnigold™
Metalization System
B C
B
E
G
1/4-28 UNF-2A
F
H
MAXIMUM RATINGS
I
C
V
CBO
V
EBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
4.0 A
85 V
4.0 V
36 V
88 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
1.99 °C/W
DIM
A
B
C
D
E
F
G
H
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.545 / 13.84
.495 / 12.57
.003 / 0.08
.185 / 4.70
.497 / 12.62
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
h
FE
f
T
C
C
G
P
d
3
I
C
= 25 mA
I
C
= 25 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 6.0 V
V
CE
= 20 V
V
CB
= 30 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 5.0
MINIMUM TYPICAL MAXIMUM
85
85
36
4.0
UNITS
V
V
V
V
I
C
= 1.4 A
I
C
= 3.0 A
f = 1.0 MHz
15
250
115
13
100
---
MHz
125
pF
dB
dB
V
CE
= 28 V
f = 1.6 MHz
I
CQ
=2.0 A
P
OUT
= 15 W
(PEP)
-40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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