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Datasheet> All Categories > Discrete semiconductor> The transistor> UPA1706G-A
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UPA1706G-A

Description
Power Field-Effect Transistor, 13A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size61KB，8 Pages
ManufacturerNEC Electronics
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UPA1706G-A Overview

Power Field-Effect Transistor, 13A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

UPA1706G-A Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee6
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

UPA1706G-A Preview

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1706
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
applications of notebook computers.
PACKAGE DRAWING (Unit : mm)
8
5
1,2,3 ; Source
; Gate
4
5,6,7,8 ; Drain
FEATURES
•
Super low on-resistance
1.44
R
DS(on)1
= 5.8 mΩ TYP. (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 7.0 mΩ TYP. (V
GS
= 4.5 V, I
D
= 7.0 A)
R
DS(on)3
= 8.0 mΩ TYP. (V
GS
= 4.0 V, I
D
= 7.0 A)
•
Low C
iss
: C
iss
= 3000 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
1.8 MAX.
1
5.37 MAX.
4
6.0 ±0.3
4.4
+0.10
–0.05
0.8
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
µ
PA1706G
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note3
Note4
Note1
Note2
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±13
±52
2.0
150
–55 to + 150
V
V
A
A
W
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Total Power Dissipation (T
A
= 25 °C)
Channel Temperature
Storage Temperature
Notes 1.
2.
3.
4.
Remark
V
GS
= 0 V
V
DS
= 0 V
PW
≤
10
µ
s, Duty cycle
≤
1 %
2
Mounted on ceramic substrate of 1200 mm x 0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G13083EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998
µ
PA1706
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, All terminals are connected)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
R
DS(on)3
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
TEST CONDITIONS
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 4.5 V, I
D
= 7.0 A
V
GS
= 4.0 V, I
D
= 7.0 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 7.0 A
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 7.0 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
Ω
I
D
= 13 A
V
DD
= 24 V
V
GS
= 10 V
I
F
= 13 A, V
GS
= 0 V
I
F
= 13 A, V
GS
= 0 V
di/dt = 100A/
µ
s
3000
950
380
40
220
140
90
56
9
14
0.8
43
50
1.5
10
MIN.
TYP.
5.8
7.0
8.0
2.0
22
10
±10
MAX.
7.8
10.0
12.0
2.5
UNIT
mΩ
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
R
L
PG.
R
G
R
G
= 10
Ω
V
DD
I
D
90 %
90 %
I
D
0 10 %
t
d(on)
t
on
t
r
t
d(off)
t
off
10 %
t
f
V
GS
I
G
= 2 mA
V
GS(on)
90 %
V
GS
Wave Form
R
L
V
DD
0
10 %
PG.
50
Ω
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
I
D
Wave Form
2
Data Sheet G13083EJ2V0DS
µ
PA1706
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
100
80
60
40
20
2.4
2.0
1.6
1.2
0.8
0.4
0
20
40
60
80
Mounted on ceramic
substrate of
1200mm
2
×
0.7mm
0
20
40
60
80
100 120 140 160
100 120 140 160
T
A
- Ambient Temperature - ˚C
T
A
- Ambient Temperature - ˚C
5
100
FORWARD BIAS SAFE OPERATING AREA
)
(on
DS GS
R tV
(a
d
ite )
Lim10 V
=
I
D(pulse)
= 52 A
10
m
10
0
PW
s
=1
I
D(DC)
= 13 A
ms
Remark
Mounted on ceramic substrate of 1200 mm
×
2
0.7 mm
I
D
- Drain Current - A
10
Po
we
rD
ms
1
iss
ip
ati
on
Lim
ite
d
0.1
T
A
= 25˚C
Single Pulse
1
10
100
0.01
0.1
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-a)
= 62.5˚C/W
10
1
0.1
0.01
0.001
100
µ
Mounted on ceramic
substrate of 1200mm
2
×
0.7mm
Single Pulse
Channel to Ambien
1m
10 m
100 m
1
10
100
1 000
10 000
PW - Pulse Width - s
Data Sheet G13083EJ2V0DS
3
µ
PA1706
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
50
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 10 V 4.5 V
4.0 V
Pulsed
10
I
D
- Drain Current - A
V
DS
= 10 V
T
A
= 125˚C
75˚C
25˚C
-25˚C
40
30
20
10
1
0.1
0.01
0
1
2
3
4
0
0.2
0.4
0.6
0.8
V
GS
-
Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
1000
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
40
Pulsed
V
DS
=10 V
Pulsed
TA =
−25˚C
25˚C
75˚C
125˚C
100
30
10
20
1
10
I
D
= 7.0 A
0.1
1
10
100
0
2
4
6
8
10
12 14 16 18 20
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
Pulsed
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0
-40 -20 0
20 40 60 80 100 120 140 160
V
DS
= 10 V
I
D
= 1 mA
R
DS(on)
- Drain to Source On-state Resistance - mΩ
20
15
10
5
0
V
GS
= 4.0 V
4.5 V
10 V
1
10
I
D
- Drain Current - A
100
V
GS(off)
- Gate to Source Cut-off Voltage - V
T
ch
- Channel Temperature - ˚C
4
Data Sheet G13083EJ2V0DS
µ
PA1706
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
16
14
12
10
8
6
4
2
0
-40 -20
I
D
= 7.0 A
0
20 40 60 80 100 120 140 160
V
GS
= 4.0 V
4.5 V
10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
I
F
- Diode Forward Current - A
Pulsed
100
0V
V
GS
=10 V
10
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1 000
t
r
t
d(off)
t
f
t
d(on)
V
GS
= 0 V
f = 1 MHz
C
iss
1000
C
oss
C
rss
100
100
10
10
0.1
1
10
100
1
0.1
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
Ω
1
10
100
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
t
rr
- Reverse Recovery Diode - ns
V
DS
- Drain to Source Voltage - V
30
100
V
DD
= 24 V
15 V
6V
V
GS
12
10
20
8
6
10
10
V
DS
0
20
40
60
80
4
2
0
100
1
0.1
1
10
100
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
I
D
= 13 A
Data Sheet G13083EJ2V0DS
5
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