DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA891TD
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Built-in low phase distortion transistor suited for OSC operation
f
T
= 5.0 GHz TYP.,
S
21e
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• Built-in 2 transistors (2
×
2SC5600)
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5600
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
µ
PA891TD
µ
PA891TD-T3
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
5.5
1.5
100
190 in 1 element
210 in 2 elements
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15538EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
©
2001
µ
PA891TD
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
MIN.
−
−
100
3.5
5.5
3.5
4.5
−
−
TYP.
−
−
−
5.0
6.5
4.0
5.5
1.5
0.8
MAX.
600
600
160
−
−
−
−
2.5
1.0
Unit
nA
nA
−
GHz
GHz
dB
dB
dB
pF
f
T
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
kH
100 to 160
2
Data Sheet P15538EJ1V0DS
µ
PA891TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
Per Element
100
50
210
190
1.0
f = 1 MHz
0.8
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
0.6
0.4
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 2 V
80
80
60
60
40
40
20
20
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
20
100
µ
A
80
µ
A
10
60
µ
A
40
µ
A
2
4
I
B
= 20
µ
A
6
8
Collector Current I
C
(mA)
40
30
0
Collector to Emitter Voltage V
CE
(V)
Data Sheet P15538EJ1V0DS
3
µ
PA891TD
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
V
CE
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
DC Current Gain h
FE
100
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
4
Data Sheet P15538EJ1V0DS
µ
PA891TD
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 2 V
f = 2 GHz
8
V
CE
= 1 V
f = 2 GHz
8
6
6
4
4
2
0
1
2
0
1
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
INSERTION POWER GAIN vs. FREQUENCY
30
Insertion Power Gain |S
21e
|
2
(dB)
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN vs. FREQUENCY
30
25
20
15
10
5
0
0.1
V
CE
= 2 V
I
C
= 5 mA
25
20
15
10
5
0
0.1
V
CE
= 1 V
I
C
= 5 mA
1
Frequency f (GHz)
10
1
Frequency f (GHz)
10
INSERTION POWER GAIN vs. FREQUENCY
30
Insertion Power Gain |S
21e
|
2
(dB)
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN vs. FREQUENCY
30
25
20
15
10
5
0
0.1
V
CE
= 2 V
I
C
= 15 mA
25
20
15
10
5
0
0.1
V
CE
= 1 V
I
C
= 15 mA
1
Frequency f (GHz)
10
1
Frequency f (GHz)
10
Data Sheet P15538EJ1V0DS
5
京公网安备 11010802033920号
EEWORLD
