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GE28F256L30T85

Description
Flash, 16MX16, 85ns, PBGA79,
Categorystorage    storage   
File Size2MB,102 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric Compare View All

GE28F256L30T85 Overview

Flash, 16MX16, 85ns, PBGA79,

GE28F256L30T85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFBGA, BGA79,7X13,30
Reach Compliance Codeunknow
Maximum access time85 ns
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B79
memory density268435456 bi
Memory IC TypeFLASH
memory width16
Number of departments/size4,255
Number of terminals79
word count16777216 words
character code16000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA79,7X13,30
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
page size4 words
Parallel/SerialPARALLEL
power supply1.8,2.5/3 V
Certification statusNot Qualified
Department size16K,64K
Maximum standby current0.000115 A
Maximum slew rate0.051 mA
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
switch bitNO
typeNOR TYPE
Base Number Matches1
Numonyx™ StrataFlash
®
Wireless Memory
(L30)
28F128L30, 28F256L30
Datasheet
Product Features
High performance Read-While-Write/Erase
— 85 ns initial access
— 52 MHz with zero wait state, 17 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst
mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 1.8 V low-power buffered programming at
7 µs/byte (Typ)
Architecture
— Asymmetrically-blocked architecture
— Multiple partitions: 8-Mbit: 128- Mbit
devices; 16-Mbit: 256-Mbit devices
— Four 16-Kword parameter blocks: top or
bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW)
or Read-While-Erase (RWE)
— Status register for partition and device
status
Density and Packaging
— 128- and 256-Mbit density in VF BGA
packages
— 128/0 and 256/0 Density in SCSP
— 16-bit wide data bus
Power
— V
CC
(core) = 1.7 V - 2.0 V
— V
CCQ
(I/O) = 2.2 V - 3.3 V
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 16 mA
(Typ) at 52 MHz
— Automatic Power Savings mode
Security
— OTP space: 64 unique factory device
identifier bits; 64 user-programmable OTP
bits; Additional 2048 user-programmable
OTP bits
— Absolute write protection: V
PP
= GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator
(Numonyx™ FDI) optimized
Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— Intel ETOX* VIII process technology (0.13
µm)
251903-11
November 2007

GE28F256L30T85 Related Products

GE28F256L30T85 PH28F256L30T85
Description Flash, 16MX16, 85ns, PBGA79, Flash, 16MX16, 85ns, PBGA79
Is it Rohs certified? incompatible conform to
package instruction FBGA, BGA79,7X13,30 FBGA, BGA79,7X13,30
Reach Compliance Code unknow compli
Maximum access time 85 ns 85 ns
startup block TOP TOP
command user interface YES YES
Universal Flash Interface YES YES
Data polling NO NO
JESD-30 code R-PBGA-B79 R-PBGA-B79
memory density 268435456 bi 268435456 bi
Memory IC Type FLASH FLASH
memory width 16 16
Number of departments/size 4,255 4,255
Number of terminals 79 79
word count 16777216 words 16777216 words
character code 16000000 16000000
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C
organize 16MX16 16MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA FBGA
Encapsulate equivalent code BGA79,7X13,30 BGA79,7X13,30
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
page size 4 words 4 words
Parallel/Serial PARALLEL PARALLEL
power supply 1.8,2.5/3 V 1.8,2.5/3 V
Certification status Not Qualified Not Qualified
Department size 16K,64K 16K,64K
Maximum standby current 0.000115 A 0.000115 A
Maximum slew rate 0.051 mA 0.051 mA
surface mount YES YES
technology CMOS CMOS
Temperature level OTHER OTHER
Terminal form BALL BALL
Terminal pitch 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM
switch bit NO NO
type NOR TYPE NOR TYPE
Base Number Matches 1 1
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