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2SC5344

Description
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size288KB,2 Pages
ManufacturerRectron
Environmental Compliance  
Download Datasheet Parametric Compare View All

2SC5344 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

2SC5344 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
2SC5344
FEATURES
* Power dissipation
P
CM
:
0.2 W (Tamb=25
O
C)
* Collector current
I
CM
:
0.8
A
* Collector-base voltage
V
(BR)CBO
: 35
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0)
Emitter-base breakdown voltage(I
E
=10mA, Ic=0)
Collector cut-off current (V
CB
= 35V, I
E
=0)
Emitter cut-off current (V
EB
= 5V, I
C
=0)
DC current gain (V
CE
= 1V, I
C
= 100mA)
Collector-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA)
Transition frequency (V
CE
= 5V, I
C
= 10mA)
Collector output capacitance (V
CB
= 10V, I
E
=0, f= 1MH
Z
)
CLASSIFICATION OF h
FE(1)
RANK
Range
Marking
Q
100-200
FAO
Y
160-320
FAY
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
f
T
C
ob
MIN
35
30
5
-
-
100
-
-
-
TYP
-
-
-
-
-
-
-
120
13
MAX
-
-
-
0.1
0.1
320
0.5
-
-
UNITS
V
V
V
mA
mA
-
V
MHz
pF
o

2SC5344 Related Products

2SC5344 2SC5344Q-T 2SC5344Q 2SC5344Y
Description Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
package instruction PLASTIC PACKAGE-3 , PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Reach Compliance Code compli compli compli compli
Base Number Matches 1 1 1 1
Is it lead-free? Lead free - Lead free Lead free
Is it Rohs certified? conform to - conform to conform to
Contacts 3 - 3 3
ECCN code EAR99 - EAR99 EAR99
Maximum collector current (IC) 0.8 A - 0.8 A 0.8 A
Collector-emitter maximum voltage 30 V - 30 V 30 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 100 - 100 160
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 - e3 e3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 265 - 265 265
Polarity/channel type PNP - PNP PNP
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING - GULL WING GULL WING
Terminal location DUAL - DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 120 MHz - 120 MHz 120 MHz

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