2SC5344
NPN General Purpose Transistors
P b
Lead(Pb)-Free
1
2
3
SOT-23
MAXIMUM RATINGS
(Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
T
A
=25°C
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Tj
Tstg
Value
30
35
5.0
800
200
+150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
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2SC5344
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
I
C
= 0.1mA, I
B
= 0
Collector-Base Breakdown Voltage
I
C
= 10mA, I
E
= 0
Emitter-Base Breakdown Voltage
I
E
= 0.01mA, I
C
=0
Collector Cuto Current
V
CB
= 35V, I
E
= 0
Emitter Cuto Current
V
EB
= 5V, I
C
= 0
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
30
35
5.0
-
-
Typ
-
-
-
-
-
Max
-
-
-
0.1
0.1
Unit
V
V
V
µA
µA
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
DC Current Transfer Ration
V
CE
= 1V, I
C
= 100mA
V
CE(sat)
h
FE
-
100
-
-
0.5
320
V
SMALL-SIGNAL CHARACTERISTICS
Transition Frequence
V
CE
= 5V, I
C
=10mA, f = 100MHz
Collector Output Capacitance
V
CB
=10V, I
E
= 0, f = 1MHz
fT
C ob
-
-
120
13
-
-
MHz
pF
Classification of hFE
Rank
Range
Marking
O
100-200
FAO
Y
160-320
FAY
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08-Dec-08