HGTG20N60A4, HGTP20N60A4
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
BRAND
Ordering Information
PART NUMBER
HGTP20N60A4
HGTG20N60A4
PACKAGE
TO-220AB
TO-247
20N60A4
20N60A4
COLLECTOR
(FLANGE)
E
NOTE: When ordering, use the entire part number.
C
G
Symbol
C
JEDEC STYLE TO-247
E
G
C
G
E
COLLECTOR
(FLANGE)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
HGTG20N60A4, HGTP20N60A4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N60A4, HGTP20N60A4
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
70
40
280
±20
±30
100A at 600V
290
2.32
-55 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
600
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
15
-
-
-
-
4.5
-
100
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.8
1.6
5.5
-
-
8.6
142
182
15
12
73
32
105
280
150
MAX
-
-
250
2.0
2.7
2.0
7.0
±250
-
-
162
210
-
-
-
-
-
350
200
UNITS
V
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
C
= 20A, V
CE
= 300V
I
C
= 20A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
=15V
R
G
= 3Ω
L = 500µH
Test Circuit (Figure 20)
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
HGTG20N60A4, HGTP20N60A4
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 20A
V
CE
= 390V
V
GE
= 15V
R
G
= 3Ω
L = 500µH
Test Circuit (Figure 20)
MIN
-
-
-
-
-
-
-
-
TYP
15
13
105
55
115
510
330
-
MAX
21
18
135
73
-
600
500
0.43
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
100
I
CE
, DC COLLECTOR CURRENT (A)
DIE CAPABILITY
80
PACKAGE LIMIT
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
120
100
80
60
40
20
0
0
T
J
= 150
o
C, R
G
= 3Ω, V
GE
= 15V, L = 100µH
60
40
20
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
100
200
300
400
500
600
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
f
MAX
, OPERATING FREQUENCY (kHz)
T
C
75
o
C
300
V
GE
15V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
V
CE
= 390V, R
G
= 3Ω, T
J
= 125
o
C
I
SC
12
10
8
6
4
2
0
400
350
300
250
200
150
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
100 f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.43
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 3Ω, L = 500µH, V
CE
= 390V
40
5
10
20
30
40
50
t
SC
10
11
12
13
14
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
14
450
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
80
80
60
60
40
T
J
= 125
o
C
20
T
J
= 150
o
C
0
T
J
= 25
o
C
40
T
J
= 125
o
C
20
T
J
= 150
o
C
T
J
= 25
o
C
0
0
0.4
1.6
2.0
2.4
2.8
0.8
1.2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
3.2
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
E
ON2
, TURN-ON ENERGY LOSS (µJ)
1200
1000
800
600
400
200
0
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 3Ω, L = 500µH, V
CE
= 390V
800
R
G
= 3Ω, L = 500µH, V
CE
= 390V
700
600
500
400
300
200
100
0
T
J
= 25
o
C, V
GE
= 12V OR 15V
5
10
15
20
25
30
35
40
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 3Ω, L = 500µH, V
CE
= 390V
20
18
16
14
12
10
8
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
36
R
G
= 3Ω, L = 500µH, V
CE
= 390V
32
28
24
20
16
12
8
4
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves
120
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 3Ω, L = 500µH, V
CE
= 390V
110
100
90
80
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
70
24
60
5
10
15
20
25
30
35
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
16
5
10
15
20
25
30
35
40
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
72
64
56
48
40
32
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
80
R
G
= 3Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
240
200
160
120
80
40
0
6
7
8
9
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
V
GE
, GATE TO EMITTER VOLTAGE (V)
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 15Ω, T
J
= 25
o
C
V
CE
= 600V
V
CE
= 400V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
V
CE
= 200V
20
40
60
80
100
120
140
160
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 14. GATE CHARGE WAVEFORMS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
R
G
= 3Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
10
I
CE
= 30A
I
CE
= 30A
1
I
CE
= 20A
I
CE
= 10A
I
CE
= 20A
I
CE
= 10A
0.1
3
50
75
100
125
150
10
100
R
G
, GATE RESISTANCE (Ω)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
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