INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC6011/A
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 200V(Min)-2SC6011
= 200V(Min)-2SC6011A
·Good
Linearity of h
FE
·Complement
to Type 2SA2151/A
APPLICATIONS
·Designed
for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base
Voltage
V
CEO
Collector-Emitter
Voltage
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VALUE
UNIT
2SC6011
200
V
2SC6011A
230
2SC6011
200
V
2SC6011A
230
6
V
15
A
4
A
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
160
W
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC6011/A
TYP.
MAX
UNIT
2SC6011
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC6011A
I
C
= 50mA ; I
B
= 0
200
V
230
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 0.5A
B
0.5
V
2SC6011
I
CBO
Collector
Cutoff Current
2SC6011A
V
CB
= 200V ; I
E
= 0
10
V
CB
= 230V ; I
E
= 0
μA
μA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
h
FE
Classifications
O
50-100
P
70-140
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V
EB
= 6V; I
C
= 0
I
C
= 3A ; V
CE
= 4V
50
I
E
= 0 ; V
CB
= 10V; f
test
= 1.0MHz
I
E
= -0.5A ; V
CE
= 12V
10
180
270
pF
20
MHz
90-180
isc Website：www.iscsemi.cn
2
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