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2SA1980EY

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size215KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric Compare View All

2SA1980EY Overview

Transistor,

2SA1980EY Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SA1980E
PNP Silicon Transistor
Description
General small signal amplifier
PIN Connection
Features
Low collector saturation voltage : V
CE(sat)
=-0.3V(Max.)
Low output capacitance : C
ob
=4pF(Typ.)
Complementary pair with 2SC5343E
1
2
3
SOT-523
Ordering Information
Type NO.
2SA1980E
Marking
A
① ② ③
①Device
Code
②hFE
Rank
③Year&Week
Code
Package Code
SOT-523
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-50
-50
-5
-150
150
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NF
Test Condition
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1KHz, Rg=10KΩ
Min.
-50
-50
-5
-
-
70
-
80
-
-
Typ. Max.
-
-
-
-
-
-
-
-
4
-
-
-
-
-0.1
-0.1
700
-0.3
-
7
10
Unit
V
V
V
μA
μA
-
V
MHz
pF
dB
*: h
FE
rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700
KSD-T5E007-000
1

2SA1980EY Related Products

2SA1980EY 2SA1980EO
Description Transistor, Transistor,
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.15 A 0.15 A
Configuration Single Single
Minimum DC current gain (hFE) 120 70
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W
surface mount YES YES
Nominal transition frequency (fT) 80 MHz 80 MHz
Base Number Matches 1 1

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