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BYD13MT/R

Description
Rectifier Diode, 1 Element, 1.4A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size42KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BYD13MT/R Overview

Rectifier Diode, 1 Element, 1.4A, 1000V V(RRM),

BYD13MT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-609 codee0
Maximum non-repetitive peak forward current20 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1.4 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BYD13 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
1996 May 24

BYD13MT/R Related Products

BYD13MT/R BYD13KT/R
Description Rectifier Diode, 1 Element, 1.4A, 1000V V(RRM), Rectifier Diode, 1 Element, 1.4A, 800V V(RRM),
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.05 V 1.05 V
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 20 A 20 A
Number of components 1 1
Maximum operating temperature 175 °C 175 °C
Maximum output current 1.4 A 1.4 A
Maximum repetitive peak reverse voltage 1000 V 800 V
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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