Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK7504-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max Unit
40
75
300
8.5
V
A
W
mΩ
total power dissipation T
mb
= 25 °C; see
Figure 2
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
Static characteristics
-
3.9
4.5
mΩ
NXP Semiconductors
BUK7504-40A
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
I
D
= 75 A; V
sup
≤
40 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 32 V; T
j
= 25 °C;
see
Figure 13
Min
-
Typ
-
Max Unit
1.6
J
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
Dynamic characteristics
Q
GD
-
50
-
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7504-40A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BUK7504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
2 of 14
NXP Semiconductors
BUK7504-40A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 3;
see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 3;
see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1]
[2]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
40
40
20
198
75
75
794
300
175
175
198
75
794
1.6
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
[2]
[2]
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
3 of 14
NXP Semiconductors
BUK7504-40A
N-channel TrenchMOS standard level FET
200
I
D
(A)
150
03ne93
120
P
der
(%)
80
03na19
100
40
50
Capped at 75 A due to package
0
25
50
75
100
125
150
175
200
T
mb
(°C)
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
R
DSon
= V
DS
/ I
D
I
D
(A)
10
2
Capped at 75 A due to package
DC
10
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03ne68
t
p
= 10
μs
100
μs
1 ms
10 ms
100 ms
1
1
10
V
DS
(V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7504-40A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 15 June 2010
4 of 14
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
