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ML320G2

Description
LASER DIODES FOR INDUSTRIAL SYSTEMS
CategoryLED optoelectronic/LED    photoelectric   
File Size133KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

ML320G2 Overview

LASER DIODES FOR INDUSTRIAL SYSTEMS

ML320G2 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionCAN-3
Reach Compliance Codeunknow
ConfigurationSINGLE
Maximum forward current0.16 A
Maximum forward voltage6 V
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesLASER DIODE
Nominal output power120 mW
peak wavelength405 nm
shapeROUND
size1.6 mm
surface mountNO
Maximum threshold current70 mA
ML3xx2 LD SERIES
FOR INDUSTRIAL SYSTEMS
MITSUBISHI LASER DIODES
TYPE
NAME
ML320G2-11 / ML329G2-11
Please note that this data sheet may be changed without any notice.
DESCRIPTION
ML3XX2 is a high-power, high-efficient blue-violet
semiconductor laser which provides a stable, single
transverse mode oscillation with emission wavelength of
405nm and standard light output of 120mW(CW).
FEATURES
• High Output Power: 120mW (CW)
• High Efficiency: 1.7mW/mA (typ.)
• Visible Light: 405nm (typ.)
• Package:
φ5.6mm
TO-CAN PKG (ML320G2)
φ3.8mm
TO-CAN PKG (ML329G2)
APPLICATION
• Industrial , Bio-medical systems
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Symbol
Po
VRL
Tc
Tstg
Parameter
Light output power
Reverse voltage
Case temperature
Storage temperature
Conditions
CW
-
-
-
Ratings
120
2
+5 ~ +80
-40 ~ +100
Unit
mW
V
°C
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time.
This does not mean the guarantee of its lifetime. Additionally, LD lifetime is strongly dependent on the case
temperature. As for the reliability, please refer to the reliability report issued by Quality Assurance Section, HF &
Optical Semiconductor Division, Mitsubishi Electric Corporation.
ELECTRICAL/OPTICAL CHARACTERISTICS
(Tc=25°C)
Symbol
Ith
Iop
Vop
Parameter
Threshold current
Operating current
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Test conditions
CW
CW, Po=120mW
CW, Po=120mW
CW, Po=120mW
CW, Po=120mW
CW, Po=120mW
CW, Po=120mW
Min.
-
-
-
1.3
400
6
15
Typ.
45
120
5.0
1.7
405
8
17
Max
70
160
6.0
2.0
410
12
21
Unit
mA
mA
V
mW/mA
nm
°
°
η
λ
p
θ
//
θ
MITSUBISHI
ELECTRIC
(1/4)
As of Oct. 2009

ML320G2 Related Products

ML320G2 ML320G2-11 ML329G2 ML329G2-11
Description LASER DIODES FOR INDUSTRIAL SYSTEMS LASER DIODES FOR INDUSTRIAL SYSTEMS LASER DIODES FOR INDUSTRIAL SYSTEMS LASER DIODES FOR INDUSTRIAL SYSTEMS
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