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MMBD914LT1

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size374KB,3 Pages
ManufacturerWILLAS ELECTRONIC CORP.
Websitehttp://www.willas.com.tw/
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MMBD914LT1 Overview

SIGNAL DIODE

MMBD914LT1 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
FM120-M
MMBD914LT1
THRU
High−Speed Switching Diode
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
Low
Features
profile surface mounted application in order to
RoHS product for packing code suffix "G"
Low power loss, high efficiency.
Halogen
current capability, low forward voltage drop.
High
free product for packing code suffix "H"
Moisture
surge capability.
1
High
Sensitivity Level
Guardring for overvoltage protection.
MAXIMUM RATINGS
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Symbol
Value
Rating
Lead-free parts meet environmental standards of
Reverse Voltage
V
R
100
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Forward Current
I
F
200
Halogen free product for packing code suffix "H"
Peak Forward Surge Current
I
FM(surge)
500
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Unit
Vdc
mAdc
mAdc
0.040(1.0)
SOT-23
Mechanical data
THERMAL CHARACTERISTICS
Epoxy : UL94-V0 rated flame retardant
Characteristic
Symbol
Max
Unit
Case : Molded plastic, SOD-123H
Total Device Dissipation
P
D
mW
,
Terminals :Plated terminals, solderable per
225
MIL-STD-750
FR–5 Board (Note 1.)
Method 2026
T
A
= 25°C
Derate above 25°C
Polarity : Indicated by cathode band
1.8
mW/°C
0.031(0.8) Typ.
3
CATHODE
1
0.024(0.6)
ANODE
0.031(0.8) Typ.
MARKING DIAGRAM
Dimensions in inches and (millimeters)
 
Thermal Resistance,
R
qJA
556
°C/W
Mounting Position : Any
Junction to Ambient
Weight : Approximated 0.011 gram
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2.)
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
T
A
= 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
mW/°C
2.4
Derate above 25°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance,
R
qJA
417
°C/W
For
Junction to
load, derate current by 20%
capacitive
Ambient
5D
5D = Device Code
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Junction and Storage
T
J
, T
stg
SYMBOL
FM120-M
°C
–55 to
ORDERING INFORMATION
Marking Code
12
13
14
15
16
18
10
115
120
Temperature Range
+150
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Device
Package
56
Shipping
14
21
28
35
42
70
105
140
Maximum RMS Voltage
V
RMS
Characteristic
Symbol
Min
Max
Unit
Maximum DC Blocking Voltage
20
30
40
50
100
150
200
V
DC
MMBD914LT1
60
SOT−23
80
3000/Tape & Reel
 
Maximum Average Forward Rectified Current
I
O
Reverse Breakdown Voltage
V
(BR)
100
 
Peak
(I
R
= 100
mAdc)
Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
OFF CHARACTERISTICS
Vdc
1.0
 
30
 
 
Reverse Voltage Leakage Current
Typical
R
= 20 Vdc)
(V
Thermal Resistance (Note 2)
(V
Junction Capacitance (Note 1)
Typical
R
= 75 Vdc)
Operating Temperature Range
Diode Capacitance
(V
R
= 0, f = 1.0
Range
Storage Temperature
MHz)
I
R
R
ΘJA
25
C
J
5.0
T
J
TSTG
nAdc
mAdc
 
 
 
C
T
4.0
-55
pF
to +125
40
120
-
65
to +175
 
-55 to +150
 
 
Forward Voltage
V
F
1.0
Vdc
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
CHARACTERISTICS
SYMBOL
(I
F
= 10 mAdc)
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
Reverse Recovery Time
t
rr
4.0
ns
 
0.5
Maximum
I
R
= 10 mAdc) (Figure 1)
at @T A=25℃
(I
F
=
Average Reverse Current
I
R
10
@T A=125℃
Rated DC
= 1.0

0.75

0.062 in.
1. FR–5
Blocking Voltage
NOTES:
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
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