UNISONIC TECHNOLOGIES CO., LTD
PZT2222A
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
1
SOT-223
NPN SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
PZT2222AL-AA3-R
Halogen Free
PZT2222AG-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
PZT2222AL-AA3-R
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel
(2) AA3: SOT-223
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R207-001.D
PZT2222A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
0.6
A
Total Device Dissipation
P
C
1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA
(T
A
=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
125
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Base Cut-Off Current
ON CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
CBO
I
EBO
I
BL
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CE
=60V, V
EB(OFF)
=3.0V
V
CB
=60V, I
E
=0
V
CB
=60V,I
E
=0, T
A
=150°C
V
EB
=3.0V, I
C
=0
V
CE
=60V, V
EB(OFF)
=3.0V
I
C
=0.1mA, V
CE
=10V
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=10mA, V
CE
=10V, T
A
=-55°C
I
C
=150mA, V
CE
=10V (Note)
I
C
=150mA, V
CE
=1.0V (Note)
I
C
=500mA, V
CE
=10V (Note)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=20V, f=100MHz
V
CB
=10V, I
E
=0, f=100kHz
V
EB
=0.5V, I
C
=0, f=100kHz
I
C
=20mA, V
CB
=20V, f=31.8MHz
I
C
=100μA, V
CE
=10V, R
S
=1.0kΩ,
f=1.0kHz
MIN
75
40
6
10
0.01
10
10
20
35
50
75
35
100
50
40
TYP
MAX
UNIT
V
V
V
nA
μA
nA
nA
DC Current Gain
h
FE
300
0.3
1.0
1.2
2.0
V
V
MHz
pF
pF
pS
dB
Ω
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage (Note)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter High
Frequency Input Impedance
V
CE(SAT)
V
BE(SAT)
f
T
C
OBO
C
IBO
r
B
'C
C
NF
0.6
300
8.0
25
150
4.0
60
R
E(HJE)
I
C
=20mA, V
CB
=20V, f=300MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R207-001.D
PZT2222A
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Delay time
t
D
V
CC
=30V, V
BE(OFF)
=0.5V,
Rise time
t
R
I
C
=150mA, I
B1
=15mA
Storage time
t
S
V
CC
=30V, I
C
=150mA,
Fall time
t
F
I
B1
= I
B2
=15mA
Note: Pulse test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%
MIN
TYP
MAX
10
25
225
60
UNIT
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R207-001.D
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