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PZT2907AT1_11

Description
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
Categorysemiconductor    Discrete semiconductor   
File Size103KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

PZT2907AT1_11 Overview

600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA

PZT2907AT1_11 Parametric

Parameter NameAttribute value
Number of terminals4
Transistor polarityPNP
Maximum on-time45 ns
Maximum off time100 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor50
Rated crossover frequency200 MHz
PZT2907A
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
4
1
2
3
NPN Complement is PZT2222AT1
The SOT-223 Package can be Soldered Using Wave or Reflow
SOT-223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints. The Formed Leads Absorb Thermal Stress during Soldering
Eliminating the Possibility of Damage to the Die
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−60
−60
−5.0
−600
Unit
Vdc
Vdc
Vdc
mAdc
SOT−223
CASE 318E
STYLE 1
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING DIAGRAM
AYW
P2F
G
G
1
P2F
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Operating and Storage Temperature Range
1. FR−4 with 1 oz and 713 mm
2
of copper area.
Symbol
P
D
R
qJA
T
L
Max
1.5
12
83.3
Unit
W
mW/°C
°C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
PZT2907AT1G
SPZT2907AT1G
PZT2907AT3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1,000 / Tape & Reel
1,000 / Tape & Reel
4,000 / Tape & Reel
260
10
−65
to
+150
°C
Sec
°C
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
Rev. 10
1
Publication Order Number:
PZT2907AT1/D
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