PZT4401
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
SOT-223
Description
The PZT4401 is designed for general
purpose switching and amplifier applications.
Features
*High Power Dissipation: 1500mW at 25
o
C
*High DC Current Gain: 100~300 at 150mA
*Complementary to PZT4403
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
4 4 0 1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
C
Parameter
Value
60
40
5
600
1.5
-55~+150
Units
V
V
V
mA
W
O
o
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Continous)
Total Power Dissipation
Junction and Storage Temperature
o
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Saturation Voltage
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CES
*V
CE
(sat)1
*V
CE
(sat)2
*V
BE
(sat)1
*V
BE
(sat)2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
Min
60
40
5
-
-
-
-
750
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
Unit
V
V
V
nA
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Test Conditions
I
C
= 100µA
I
C
= 1mA
I
E
= 10µA
V
CE
= 35V,V
BE
=0.4V
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
V
CE
= 1 V, I
C
=0.1 mA
V
CE
= 1 V, I
C
=1mA
V
CE
= 1 V, I
C
=10 mA
V
CE
= 1 V, I
C
=150mA
V
CE
= 2 V, I
C
=500mA
V
CE
= 10 V, I
C
= 20mA,f=100MHz
V
CB
= 5 V , f=1MHz
*Pulse width
≦
380
µ
s, Duty Cycle
≦
2%
mV
mV
mV
V
Base Satruation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
fT
C
ob
MH z
pF
Classification of hFE4
Rank
Range
http://www.SeCoSGmbH.com
Q
100~210
R
190~300
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
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