PZT4403
40 V, 600 mA PNP switching transistor
Rev. 03 — 2 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP switching transistor in a medium power SOT223 (SC-73) small Surface-Mounted
Device (SMD) plastic package.
NPN complement: PZT4401.
1.2 Features and benefits
High current (max. 600 mA)
Low voltage (max. 40 V)
1.3 Applications
Switching and linear amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
=
−1
V;
I
C
=
−150
mA
[1]
Conditions
open base
Min
-
-
100
-
-
-
Max
−40
−600
300
Unit
V
mA
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2. Pinning information
Table 2.
Pin
1
2, 4
3
Pinning
Description
base
collector
emitter
1
2
3
4
1
3
sym028
Simplified outline
Graphic symbol
2, 4
NXP Semiconductors
PZT4403
40 V, 600 mA PNP switching transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
PZT4403
SC-73
Description
plastic surface-mounted package with increased
heatsink; 4 leads
Version
SOT223
Type number
4. Marking
Table 4.
PZT4403
Marking codes
Marking code
ZT4403
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
−40
−40
−6
−600
−800
−200
1150
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
T
amb
≤
25
°C
[1]
-
-
−65
−65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
106
25
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
PZT4403_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 2 March 2010
2 of 9
NXP Semiconductors
PZT4403
40 V, 600 mA PNP switching transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
Conditions
V
CB
=
−40
V; I
E
= 0 A
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−1
V;
I
C
=
−0.1
mA
V
CE
=
−1
V;
I
C
=
−1
mA
V
CE
=
−1
V;
I
C
=
−10
mA
V
CE
=
−1
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−500
mA
V
CEsat
collector-emitter
saturation voltage
I
C
=
−150
mA;
I
B
=
−15
mA
I
C
=
−500
mA;
I
B
=
−50
mA
V
BEsat
base-emitter
saturation voltage
I
C
=
−150
mA;
I
B
=
−15
mA
I
C
=
−500
mA;
I
B
=
−50
mA
t
d
t
r
t
on
t
s
t
f
t
off
f
T
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
V
CE
=
−10
V;
I
C
=
−20
mA;
f = 100 MHz
V
CB
=
−5
V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
=
−500
mV;
I
C
= i
c
= 0 A;
f = 1 MHz
V
CC
=
−29.5
V;
I
C
=
−150
mA;
I
Bon
=
−15
mA;
I
Boff
= 15 mA;
V
BB
= 3.5 V
[1]
Min
-
-
30
60
100
100
20
-
-
-
-
-
-
-
-
-
-
200
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
−50
−50
-
-
-
300
-
−400
−750
−950
−1300
15
30
40
300
50
350
-
Unit
nA
nA
[1]
[1]
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
MHz
[1]
[1]
[1]
C
c
collector capacitance
-
-
8.5
pF
C
e
emitter capacitance
-
-
35
pF
[1]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
PZT4403_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 2 March 2010
3 of 9
NXP Semiconductors
PZT4403
40 V, 600 mA PNP switching transistor
300
h
FE
mgs333
200
100
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
=
−1
V
Fig 1.
DC current gain as a function of collector current; typical values
8. Test information
V
BB
V
CC
R
B
oscilloscope
V
I
R1
(probe)
450
Ω
R2
R
C
V
o
(probe)
450
Ω
DUT
oscilloscope
mgd624
V
i
=
−9.5
V; T = 500
μs;
t
p
= 10
μs
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω
V
BB
= 3.5 V; V
CC
=
−29.5
V
Oscilloscope input impedance Z
i
= 50
Ω
Fig 2.
Test circuit for switching times
PZT4403_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 2 March 2010
4 of 9
NXP Semiconductors
PZT4403
40 V, 600 mA PNP switching transistor
9. Package outline
6.7
6.3
3.1
2.9
4
1.1
0.7
7.3
6.7
3.7
3.3
1.8
1.5
1
2.3
4.6
Dimensions in mm
2
3
0.8
0.6
0.32
0.22
04-11-10
Fig 3.
Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PZT4403
[1]
Package Description
SOT223
8 mm pitch, 12 mm tape and reel
Packing quantity
1000
-115
4000
-135
For further information and the availability of packing methods, see
Section 13.
PZT4403_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 2 March 2010
5 of 9
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