PZTA42 datasheet, PDF - EEWORLD Datasheet

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PZTA42: Description500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size179KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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PZTA42 Overview

500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR

PZTA42 Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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SEMICONDUCTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION.

TELEPHONE APPLICATION.

FEATURES

Complementary to PZTA92.

E

B

PZTA42

EPITAXIAL PLANAR NPN TRANSISTOR

A

H

L

2

K

1

3

G

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

E

P

C

*

T

j

T

stg

18

1.5mm. :

RATING

300

5.0

500

-500

1

150

-55 150

UNIT

V

J

F

1

2

3

V

mA

W

DIM

A

B

C

MILLIMETERS

_

6.5 + 0.2

_

3.5 + 0.2

1.8 MAX

0.7+0.15/-0.1

_

7 + 0.3

2.3 TYP

0.26+0.09/-0.02

3.0+0.15/-0.1

_

1.75 + 0.25

0.1 MAX

10 MAX

D

E

F

G

H

J

K

L

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

* Package Mounted On FR-4 PCB 36

SOT-223

mountina pad for the collector lead min.6cm

2

Marking

Type Name

PZTA42

Lot No.

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

SYMBOL

V

(BR)CBO

V

(BE)CEO

TEST CONDITION

I

C

=100 A, I

E

=0

I

C

=1.0mA, I

B

=0

I

C

=1.0mA, V

CE

=10V

DC Current Gain

* h

FE

I

C

=10mA, V

CE

=10V

I

C

=30mA, V

CE

=10V

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

V

CE(sat)

V

BE(sat)

f

T

C

ob

I

C

=20mA, I

B

=2.0mA

I

C

=20mA, I

B

=2.0mA

V

CE

=20V, I

C

=10mA, f=100MHz

V

CB

=20V, I

E

=0, f=1MHz

MIN.

300

40

-

50

-

TYP.

-

MAX.

-

0.5

0.9

-

3.0

V

MHz

pF

UNIT

V

*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%

2004. 05. 21

Revision No : 0

1/2

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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