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SBYV26CHE3-73

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size78KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SBYV26CHE3-73 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL

SBYV26C
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ideal for printed circuit boards
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
SUPERECTIFIER
®
DO-204AL (DO-41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
1.0 A
600 V
30 A
30 ns
1.3 V
175 °C
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at T
L
= 85 °C (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy
Operating junction and storage temperature range
Note
(1)
Peak reverse energy measured with 8/20 μs surge
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM (1)
T
J
, T
STG
VALUE
600
420
600
1.0
30
5.0
- 65 to + 175
UNIT
V
V
V
A
A
mJ
°C
Document Number: 88735
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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