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D648S09

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size65KB,5 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric Compare View All

D648S09 Overview

Rectifier Diode,

D648S09 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown

D648S09 Preview

Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 648 S 06...10
T
vj
= - 25°C...T
vj max
S
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
T
C
=100°C
T
C
=70°C
T
vj
= 25°C, tp = 10 ms
T
vj
= T
vj max
, tp = 10 ms
T
vj
= 25°C, tp = 1 ms
T
vj
= T
vj max
, tp = 1 ms
V
RRM
600
800
1000
700
900
1100
1400
648
900
12200
10100
24940
20650
744200
510050
311000
213200
V
V
V
V
V
V
A
A
A
A
A
A
A
A²s
A²s
A²s
A²s
T
vj
= + 25°C...T
vj max
V
RSM
I
FRMSM
I
FAVM
I
FSM
Grenzlastintegral
T
vj
= 25°C, tp = 10ms
T
vj
= T
vj max
, tp = 10ms
T
vj
= 25°C, tp = 1ms
I²t
I²t-value
T
vj
= T
vj max
, tp = 1ms
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Typischer Wert der Durchlaßverzögerungsspannung
typical value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovered time
T
vj
= T
vj max
, i
F
= 2700 A
v
F
V
(TO)
r
T
V
FRM
max.
2,27
1,05
0,43
V
V
mΩ
V
1)
T
vj
= T
vj max
T
vj
= T
vj max
IEC 747-2
T
vj
= T
vj max
di
F
/dt=50A/µs, v
R
=0V
IEC 747-2, Methode / method II
T
vj
= T
vj max,
i
FM
=2700A
di
F
/dt=50 A/µs, v
R
=0V
T
vj
= 25°C,
v
R
=V
RRM
typ
2,25
t
fr
typ
4,7
µs
1)
i
R
I
RM
T
vj
= T
vj max
, v
R
= V
RRM
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=900A,-di
F
/dt=50A/µs
v
R
=100V, v
RM<
=200 V
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=900 A,-di
F
/dt=50A/µs
v
R
=100V, v
RM<
=200 V
DIN IEC 747-2, T
vj
=T
vj max
i
FM
=900A,-di
F
/dt=50A/µs
v
R
=100 V; v
RM<
=200V
max.
max.
20
200
57
mA
mA
A
1)
Q
r
112
µAs
1)
t
rr
2,15
µs
1)
Sanftheit
Softness
T
vj
= T
vj max
i
FM
=A,-di
F
/dt=A/µs
v
R
<=0,5 V
RRM
, v
RM
=0,8 V
RRM
SR
µs/A
2)
1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standard value)
2) Richtwert für untere Streubereichsgrenze / Lower limit of scatter range (standard value)
SZ-M / 17.02.87
Seite/page 1
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 648 S 08...10
Kühlfläche / cooling surface
beidseitig / two-sided,
Θ
=180°sin
beidseitig / two-sided, DC
Anode / anode,
Θ
=180°sin
Anode / anode, DC
Kathode / cathode,
Θ
=180°sin
Kathode / cathode, DC
S
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resitance, junction to case
R
thJC
max.
max.
max.
max.
max.
max.
R
thCK
max.
max.
T
vj max
T
c op
T
stg
0,0075
0,015
150
-40...+150
-40...+150
°C/W
°C/W
°C
°C
°C
0,044
0,041
0,073
0,070
0,103
0,1
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Übergangs- Wärmewiderstand
thermal resitance, case to heatsink
Höchstzulässige Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpreßkraft
clamping force
Gewicht
weight
Kriechstrecke
creepage distance
Feuchteklasse
humidity classification
Schwingfestigkeit
vibration resistance
DIN 40040
Seite 3
page 3
Durchmesser/diameter 30mm
F
G
typ.
6...14,5
100
17
C
5x9,81
kN
g
mm
f = 50Hz
m/s²
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt
in Verbindung mit den zugehörigen Technischen Erläuterungen./ The technical Information specifies semiconductors devices but
promises no characteristics. It is valid in combination with the belonging technical notes.
SZ-M / 17.02.87
Seite/page 2
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 648 S 08...10
S
SZ-M / 17.02.87
Seite/page 3
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 648 S 08...10
Analytische Elemente des transienten Wärmewiderstandes Z
thJC
für DC
Analytical ementes of transient thermal impedance Z
thJC
for DC
Pos.n
1
0,00067
0,000174
0,00067
0,000174
0,00067
0,000174
2
0,00543
0,00177
0,00553
0,00182
0,00543
0,00177
3
0,0143
0,0621
0,0225
0,0877
0,0174
0,0678
n
max
n=1
S
Kühlung
cooling
4
0,0206
0,343
0,0413
2,575
0,0765
2,336
5
6
7
beidseitig
two-sided
anodenseitig
anode-sided
kathodenseitig
cathode-sided
R
thn
[°C/W]
τ
n
[s]
R
thn
[°C/W]
τ
n
[s]
R
thn
[°C/W]
τ
n
[s]
Analytische Funktion / analytical function : Z
thJC
=
=∑
R
thn
( 1 - EXP ( - t /
τ
n
))
SZ-M / 17.02.87
Seite/page 4
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 648 S 08...10
S
4.000
3.500
3.000
2.500
i
F
[A]
2.000
1.500
1.000
500
0
0,5
1
1,5
v
F
[V]
2
2,5
3
Grenzdurchlaßkennlinie / Limiting 0n-state characteristic i
F
=f(v
F
)
T
vj
= T
vj max
SZ-M / 17.02.87
Seite/page 5

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