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SM5407

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-213AB
CategoryDiscrete semiconductor    diode   
File Size138KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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SM5407 Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-213AB

SM5407 Parametric

Parameter NameAttribute value
Parts packaging codeDO-213AB
Manufacturer packaging codeDO-213AB
SM5400-SM5408
Surface Mount Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
DO -
213AB
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L
recognition 94V-0
SOLDERABLE ENDS
D2=D1
0
0.20
D1
2.6± 0.15
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
Mechanical Data
Case:JEDEC DO--213AB,MELF
Polarity: Color band denotes cathode
Weight: 0.0046 ounces, 0.116 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SM
SM
SM SM SM SM SM
SM SM
5400 5401 5402 5403 5404 5405 5406 5407 5408
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=50
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
A
=25
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
3.0
500
350
500
600
420
600
800
560
800
1000
700
1000
I
FSM
100
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
Typical thermal resistance junction to terminal
Typical thermal resistance
(Note1)
V
F
I
R
R
t hT
1.2
10.0
10
40
- 50 ---- + 175
- 50 ---- + 175
V
A
K/W
K/W
R
thA
Operating junction temperature range
Storage temperature range
NOTE: 1. Thermal resistance f rom junction to ambient.
T
J
T
STG
http://www.luguang.cn
mail:lge@luguang.cn

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Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-213AB 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-213AB Silicon NPN Power Transistors 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-213AB 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-213AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-213AB 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-213AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-213AB 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-213AB
Parts packaging code DO-213AB DO-213AB - DO-213AB - - DO-213AB DO-213AB DO-213AB
Manufacturer packaging code DO-213AB DO-213AB - DO-213AB - - DO-213AB DO-213AB DO-213AB
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