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MV830B

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size73KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

MV830B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silicon, Abrupt, DO-7

MV830B Parametric

Parameter NameAttribute value
MakerAPI Technologies
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio1.8
Nominal diode capacitance15 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor30
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.2 µA
Reverse test voltage25 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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