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MSS60,144-B10B

Description
Mixer Diode, High Barrier, Silicon, CASE B10B, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size140KB,4 Pages
ManufacturerCobham PLC
Environmental Compliance
Download Datasheet Parametric View All

MSS60,144-B10B Overview

Mixer Diode, High Barrier, Silicon, CASE B10B, 2 PIN

MSS60,144-B10B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCobham PLC
package instructionR-XDMW-F2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance0.1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
JESD-30 codeR-XDMW-F2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeHIGH BARRIER
MSS60,000 Series
Extra High Barrier Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS60,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of +6 dBm to +12
dBm per diode.
Features
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Beam Lead
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
Model
MSS60,1
44-B10B
MSS60,1
48-B10B
MSS60,1
53-B10B
MSS60,244-B20
MSS60,248-B20
MSS60,253-B20
Test
Conditions
Configuration
TYP
Outline
V
V
pF
Single Junction
Single Junction
Single Junction
Series Tee
Series Tee
Series Tee
625
625
625
625
625
625
I
F
= 1
mA
3.5
3.5
3.5
3.5
3.5
3.5
I
R
=
10
μA
0.08 0.10
0.1 / 0.1
2
5
0.20 / 0.25
0.08 / 0.10
0.1 / 0.1
2
5
0.20 / 0.25
V
R
= 0 V
F = 1 MHz
20
13
7
20
13
7
I
F
= 5 mA
25
18
1
2
25
18
1
2
B10B
B10B
B10B
B20
B20
B20
Revision Date: 05/20/05

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