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SMB10J18

Description
1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size115KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SMB10J18 Overview

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMB (DO-214AA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
BR
(bi-directional)
V
WM
P
PPM
(uni-directional)
P
PPM
(bi-directional)
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 49.1 V
6.4 V to 49.1 V
5.0 V to 40 V
1000 W
800 W
100 A
150 °C
Uni-directional, bi-directional
SMB (DO-214AA)
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, industrial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
uni-directional
bi-directional
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
1000
800
See next table
100
-55 to +150
UNIT
W
A
A
°C
Revision: 16-Jan-18
Document Number: 88422
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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