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SMBG7.0

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size98KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SMBG7.0 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SMBG7.0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Breakdown voltage nominal value8.65 V
Maximum clamping voltage13.3 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage7 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
SMBG5.0A thru SMBG188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMBG (DO-215AA)
PRIMARY CHARACTERISTICS
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.0 V to 188 V
6.4 V to 231 V
6.4 V to 231 V
600 W
100 A
150 °C
Uni-directional, bi-directional
SMBG (DO-215AA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMBG (DO-215AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, industrial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
for uni-directional types the band denotes cathode
end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBG10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)(2)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
600
See next table
100
-55 to +150
UNIT
W
A
A
°C
Revision: 16-Jan-18
Document Number: 88456
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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