M93S66, M93S56, M93S46
4K/2K/1K (x16) Serial Microwire Bus EEPROM
with Block Protection
INDUSTRY STANDARD MICROWIRE BUS
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SINGLE ORGANIZATION by WORD (x16)
WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for M93Sx6 version
– 2.5V to 5.5V for M93Sx6-W version
– 1.8V to 3.6V for M93Sx6-R version
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 words)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD and LATCH-UP
PERFORMANCES
DESCRIPTION
This M93S46/S56/S66 specification covers a
range of 4K/2K/1K bit serial EEPROM products
respectively. In this text, products are referred to as
M93Sx6. The M93Sx6 is an Electrically Erasable
Programmable Memory (EEPROM) fabricated with
STMicroelectronics’s High Endurance Single
Polysilicon CMOS technology.
Table 1. Signal Names
S
D
Q
C
PRE
W
V
CC
V
SS
Chip Select Input
Serial Data Input
Serial Data Output
Serial Clock
Protect Enable
Write Enable
Supply Voltage
Ground
8
1
PSDIP8 (BN)
0.25mm Frame
8
1
SO8 (MN)
150mil Width
8
1
TSSOP8 (DW)
169mil Width
Figure 1. Logic Diagram
VCC
D
C
S
PRE
W
M93Sx6
Q
VSS
AI02020
February 1999
1/23
M93S66, M93S56, M93S46
Figure 2A. DIP Pin Connections
Figure 2B. SO and TSSOP Pin Connections
M93Sx6
S
C
D
Q
1
2
3
4
8
7
6
5
AI02021
M93Sx6
VCC
PRE
W
VSS
S
C
D
Q
1
2
3
4
8
7
6
5
AI02022
VCC
PRE
W
VSS
Table 2. Absolute Maximum Ratings
(1)
Symbol
T
A
T
STG
T
LEAD
V
IO
V
CC
V
ESD
Parameter
Ambient Operating Temperature
Storage Temperature
Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
Value
–40 to 125
–65 to 150
215
260
–0.3 to V
CC
+0.5
–0.3 to 6.5
4000
500
Unit
°C
°C
°C
V
V
V
V
Input or Output Voltages (Q = V
OH
or Hi-Z)
Supply Voltage
Electrostatic Discharge Voltage (Human Body model)
(2)
Electrostatic Discharge Voltage (Machine model)
(3)
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500
Ω).
3. EIAJ IC-121 (Condition C) (200pF, 0
Ω).
DESCRIPTION
(cont’d)
The M93Sx6 memory is accessed through a serial
input (D) and output (Q) using the MICROWIRE
bus protocol. The M93Sx6 is specified at 5V
±10%,
the M93Sx6-W specified at 2.5V to 5.5V and the
M93Sx6-R specified at 1.8V to 3.6V.
The M93S66/S56/S46 memory is divided into
256/128/64 x16 bit words respectively. These
memory devices are available in both PSDIP8,
SO8 and TSSOP8 packages.
The M93Sx6 memory is accessed by a set of
instructions which includes Read, Write, Page
Write, Write All and instructions used to set the
memory protection. A Read instruction loads the
address of the first word to be read into an internal
address pointer. The data contained at this address
is then clocked out serially. The address pointer is
automatically incremented after the data is output
and, if the Chip Select input (S) is held High, the
M93Sx6 can output a sequential stream of data
words. In this way, the memory can be read as a
data stream from 16 to 4096 bits (for the M93S66),
or continuously as the address counter automat-
ically rolls over to ’00’ when the highest address is
reached.
2/23
M93S66, M93S56, M93S46
Table 3. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages (M93Sxx)
Input Pulse Voltages (M93Sxx-W, M93Sxx-R)
Input Timing Reference Voltages (M93Sxx)
Output Timing Reference Voltages (M93Sxx)
Input and Output Timing Reference Voltages (M93Sxx-W, M93Sxx-R)
Output Load
Note that Output Hi-Z is defined as the point where data is no longer driven.
≤
50ns
0.4V to 2.4V
0.2V
CC
to 0.8V
CC
1.0V to 2.0V
0.8V to 2.0V
0.3V
CC
to 0.7V
CC
C
L
= 100pF
Table 4. Capacitance
(1)
(T
A
= 25
°C,
f = 1 MHz )
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Condition
V
IN
= 0V
V
OUT
= 0V
Min
Max
5
5
Unit
pF
pF
Note:
1. Sampled only, not 100% tested.
Within the time required by a programming cycle
(t
W
), up to 4 words may be written with help of the
Page Write instruction. the whole memory may also
be erased, or set to a predetermined pattern, by
using the Write All instruction.
Within the memory, an user defined area may be
protected against further Write instructions. The
size of this area is defined by the content of a
Protect Register, located outside of the memory
array. As a final protection step, data may be per-
manently protected by programming a One Time
Programming bit (OTP bit) which locks the Protect
Register content.
Programming is internally self-timed (the external
clock signal on C input may be disconnected or left
running after the start of a Write cycle) and does
not require an erase cycle prior to the Write instruc-
tion. The Write instruction writes 16 bits at one time
int o one of the 256/128/64 words of the
M93S46/S56/S66 respectively, the Page Write in-
struction writes up to 4 words of 16 bits to sequen-
tial locations, assuming in both cases that all
addresses are outside the Write Protected area.
After the start of the programming cycle, a
Ready/Busy signal is available on the Data output
(Q) when Chip Select (S) is driven High.
An internal feature of the M93Sx6 provides Power-
on Data Protection by inhibiting any operation
Figure 3. AC Testing Input Output Waveforms
M93SXX
2.4V
2V
1V
0.4V
INPUT
OUTPUT
2.0V
0.8V
M93SXX-W & M93SXX-R
0.8VCC
0.7VCC
0.3VCC
AI02791
0.2VCC
when the Supply is too low. The design of the
M93Sx6 and the High Endurance CMOS technol-
ogy used for its fabrication give an Erase/Write
cycle Endurance of 1,000,000 cycles and a data
retention of 40 years.
3/23
M93S66, M93S56, M93S46
Table 5A. DC Characteristics for M93Sx6
(T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5V to 5.5V)
Symbol
I
LI
I
LO
I
CC
I
CC1
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby)
Input Low Voltage
(D, C, S, W, PRE)
Input High Voltage
(D, C, S, W, PRE)
Output Low Voltage (Q)
Output High Voltage (Q)
V
CC
= 5V, I
OL
= 2.1mA
V
CC
= 5V, I
OH
= –400µA
2.4
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
, Q in Hi-Z
V
CC
= 5V, S = V
IH
, f = 1 MHz
V
CC
= 5V, S = V
SS
, C = V
SS
,
W = V
SS
or V
CC
, PRE = V
SS
or V
CC
–0.3
2
Min
Max
±2.5
±2.5
1.5
50
0.8
V
CC
+ 1
0.4
Unit
µA
µA
mA
µA
V
V
V
V
Table 5B. DC Characteristics for M93Sx6
(T
A
= –40 to 125°C; V
CC
= 4.5V to 5.5V)
Symbol
I
LI
I
LO
I
CC
I
CC1
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby)
Input Low Voltage
(D, C, S, W, PRE)
Input High Voltage
(D, C, S, W, PRE)
Output Low Voltage (Q)
Output High Voltage (Q)
V
CC
= 5V, I
OL
= 2.1mA
V
CC
= 5V, I
OH
= –400µA
2.4
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
, Q in Hi-Z
V
CC
= 5V, S = V
IH
, f = 1 MHz
V
CC
= 5V, S = V
SS
, C = V
SS
,
W = V
SS
or V
CC
, PRE = V
SS
or V
CC
–0.3
2
Min
Max
±2.5
±2.5
1.5
50
0.8
V
CC
+ 1
0.4
Unit
µA
µA
mA
µA
V
V
V
V
4/23
M93S66, M93S56, M93S46
Table 5C. DC Characteristics for M93Sx6-W
(T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 2.5V to 5.5V)
Symbol
I
LI
I
LO
I
CC
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (CMOS Inputs)
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
, Q in Hi-Z
V
CC
= 5V, S = V
IH
, f = 1 MHz
V
CC
= 2.5V, S = V
IH
, f = 1 MHz
I
CC1
V
IL
V
IH
V
OL
Supply Current (Standby)
Input Low Voltage
(D, C, S, W, PRE)
Input High Voltage
(D, C, S, W, PRE)
Output Low Voltage (Q)
V
CC
= 5V, I
OL
= 2.1mA
V
CC
= 2.5V, I
OL
= 100µA
V
OH
Output High Voltage (Q)
V
CC
= 5V, I
OH
= –400µA
V
CC
= 2.5V, I
OH
= –100µA
2.4
V
CC
– 0.2
V
CC
= 2.5V, S = V
SS
, C = V
SS
,
W = V
SS
or V
CC
, PRE = V
SS
or V
CC
–0.3
0.7 V
CC
Min
Max
±2.5
±2.5
1.5
1
10
0.2 V
CC
V
CC
+ 1
0.4
0.2
Unit
µA
µA
mA
mA
µA
V
V
V
V
V
V
Table 5D. DC Characteristics for M93Sx6-R
(1)
(T
A
= 0 to 70°C or –20 to 85°C; V
CC
= 1.8V to3.6V)
Symbol
I
LI
I
LO
I
CC
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (CMOS Inputs)
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
, Q in Hi-Z
V
CC
= 3.6V, S = V
IH
, f = 1 MHz
V
CC
= 1.8V, S = V
IH
, f = 1 MHz
I
CC1
V
IL
V
IH
V
OL
V
OH
Supply Current (Standby)
Input Low Voltage
(D, C, S, W, PRE)
Input High Voltage
(D, C, S, W, PRE)
Output Low Voltage (Q)
Output High Voltage (Q)
V
CC
= 1.8V, I
OL
= 100µA
V
CC
= 1.8V, I
OH
= –100µA
V
CC
– 0.2
V
CC
= 1.8V, S = V
SS
, C = V
SS
,
W = V
SS
or V
CC
, PRE = V
SS
or V
CC
–0.3
0.8 V
CC
Min
Max
±2.5
±2.5
1.5
1
5
0.2 V
CC
V
CC
+ 1
0.2
Unit
µA
µA
mA
mA
µA
V
V
V
V
Note:
1. This is preliminary data.
5/23
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