IC 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Parts packaging code | TSOP2 |
| package instruction | TSOP2, TSOP54,.46,32 |
| Contacts | 54 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 6 ns |
| Maximum clock frequency (fCLK) | 125 MHz |
| I/O type | COMMON |
| interleaved burst length | 1,2,4,8 |
| JESD-30 code | R-PDSO-G54 |
| JESD-609 code | e0 |
| length | 22.22 mm |
| memory density | 134217728 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 54 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16MX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSOP2 |
| Encapsulate equivalent code | TSOP54,.46,32 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| Maximum seat height | 1.2 mm |
| Continuous burst length | 1,2,4,8,FP |
| Maximum standby current | 0.001 A |
| Maximum slew rate | 0.18 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.8 mm |
| Terminal location | DUAL |
| width | 10.16 mm |
| TC59SM708FT-80 | TC59SM704FTL-80 | TC59SM704FT-80 | TC59SM704FT-75 | |
|---|---|---|---|---|
| Description | IC 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | IC IC,SDRAM,4X8MX4,CMOS,TSOP,54PIN,PLASTIC, Dynamic RAM |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Parts packaging code | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| package instruction | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 |
| Contacts | 54 | 54 | 54 | 54 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Maximum access time | 6 ns | 6 ns | 6 ns | 5.4 ns |
| Maximum clock frequency (fCLK) | 125 MHz | 125 MHz | 125 MHz | 133 MHz |
| I/O type | COMMON | COMMON | COMMON | COMMON |
| interleaved burst length | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 code | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| length | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm |
| memory density | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit |
| Memory IC Type | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| memory width | 8 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 54 | 54 | 54 | 54 |
| word count | 16777216 words | 33554432 words | 33554432 words | 33554432 words |
| character code | 16000000 | 32000000 | 32000000 | 32000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 16MX8 | 32MX4 | 32MX4 | 32MX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| Encapsulate equivalent code | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 4096 | 4096 | 4096 | 4096 |
| Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| Continuous burst length | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| Maximum standby current | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
| Maximum slew rate | 0.18 mA | 0.18 mA | 0.18 mA | 0.19 mA |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| width | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
| Maker | Toshiba Semiconductor | - | Toshiba Semiconductor | Toshiba Semiconductor |
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