STPS40M80C
Power Schottky rectifier
Features
■
■
■
■
A1
K
A2
High junction temperature capability
Optimized trade-off between leakage current
and forward voltage drop
Low leakage current
Avalanche capability specified
A1
K
K
K
A2
A2
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I
2
PAK and D
2
PAK, this
device is particularly suited for use in notebook,
game station, LCD TV and desktop adapters,
providing these applications with a good
efficiency at both low and high load.
Table 1.
Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
Value
2 x 20 A
80 V
175 °C
475 mV
A1
D
2
PAK
STPS40M80CG-TR
I
2
PAK
STPS40M80CR
K
A2
A1
K
TO-220AB
STPS40M80CT
Figure 1.
V
I
Electrical characteristics
(a)
I
"Forward"
2 x I
O
I
F
X
V
RRM
V
R
V
AR
I
O
X
V
I
R
VTo V
F(Io)
V
F
V
F(2xIo)
"Reverse"
I
AR
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in
Figure 11.
V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics
April 2011
Doc ID 018718 Rev 1
1/10
www.st.com
10
Characteristics
STPS40M80C
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Absolute ratings (limiting values, per diode, at T
amb
= 25 °C unless
otherwise specified)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ
= 0.5
Surge non repetitive
forward current
T
c
= 150 °C Per diode
T
c
= 150 °C Per device
T
c
= 25 °C
Value
80
30
20
40
200
10000
100
100
-65 to +175
175
Unit
V
A
A
A
W
V
V
°C
°C
t
p
= 10 ms sinusoidal
P
ARM(1)
Repetitive peak avalanche power
V
ARM(2)
V
ASM(2)
T
stg
T
j
Maximum repetitive peak
avalanche voltage
Maximum single pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
(3)
T
j
= 25 °C, t
p
= 1 µs
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 30 A
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 30 A
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See
Figure 11
3.
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Symbol
R
th(j-c)
R
th(c)
Thermal parameters
Parameter
Junction to case
Coupling
per diode
total
Value
1.30
0.75
0.20
Unit
°C/W
°C/W
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
2/10
Doc ID 018718 Rev 1
STPS40M80C
Table 4.
Symbol
I
R(1)
Characteristics
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
I
F
= 10 A
I
F
= 20 A
I
F
= 40 A
Min.
-
-
-
-
-
-
-
-
Typ.
15
15
0.550
0.475
0.655
0.570
0.800
0.680
Max.
65
40
0.600
0.510
0.735
0.635
0.920
0.795
V
Unit
µA
mA
V
F(2)
Forward voltage drop
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.475 x I
F(AV)
+ 0.008 x I
F2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
24
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
22
20
18
16
14
12
10
8
6
4
2
0
P
F(AV)
(W)
T
δ
= t
p
/ T
I
F(AV)
(A)
Rth(j-a) = Rth(j-c)
δ
=1
22
20
18
16
14
12
10
8
6
4
2
0
0
25
50
75
t
p
δ
= 0.2
δ
= 0.05
δ
= 0.1
δ
= 0.5
I
F(AV)
(A)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
T
amb
(°C)
100
125
150
175
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
1
P
ARM
(tp)
P
ARM
(1µs)
1.2
1
P
ARM
(T
j
)
P
ARM
(25 °C)
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
t
p
(µs)
0.1
1
10
100
1000
0
25
T
j
(°C)
50
75
100
125
150
Doc ID 018718 Rev 1
3/10
Characteristics
STPS40M80C
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7.
Relative thermal impedance
junction to case versus pulse
duration
260
240
220
200
180
160
140
120
100
80
60
40
20
0
I
M
(A)
1.0
0.9
0.8
0.7
T
c
= 25 °C
T
c
= 75 °C
T
c
= 125 °C
0.6
0.5
0.4
0.3
0.2
t
δ
= 0.5
1.E-02
1.E-01
Z
th(j-c)
/R
th(j-c)
I
M
Single pulse
t(s)
1.E+00
0.1
0.0
1.E-04
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
Figure 8.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
T
j
= 150 °C
T
j
= 125 °C
T
j
= 100 °C
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
F = 1 MHz
V
osc
= 30 mV
RMS
T
j
= 25 °C
1.E+05
I
R
(µA)
10000
C(pF)
1.E+04
1.E+03
T
j
= 75 °C
1.E+02
T
j
= 50 °C
1.E+01
T
j
= 25 °C
1000
1.E+00
0
10
20
30
40
50
60
70
V
R
(V)
80
100
1
10
V
R
(V)
100
Figure 10. Forward voltage drop versus
forward current (per diode)
40
35
30
25
20
15
10
5
0
0.0
T
j
= 25 °C
(Maximum values)
T
j
= 125 °C
(Typical values)
Figure 11. Reverse safe operating area
(t
p
< 1 µs and T
j
< 150 °C)
30.0
I
FM
(A)
T
j
= 125 °C
(Maximum values)
I
arm
(A)
I
arm
(V
arm
) 150 °C, 1 µs
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
V
FM
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
21.0
20.0
100
105
110
115
V
arm
(V)
120
125
130
135
140
145
150
4/10
Doc ID 018718 Rev 1
STPS40M80C
Characteristics
Figure 12. Thermal resistance junction to ambient versus copper surface under tab for D
2
PAK
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
D PAK
2
R
th(j-a)
(°C/W)
epoxy printed board copper thickness = 35 µm
S
Cu
(cm )
35
40
2
Doc ID 018718 Rev 1
5/10
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