DATA SHEET
SEMICONDUCTOR
ULT RAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere
FE A T URES
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
•
Void-free Plastic in DO-41 package
•
1.0 ampere operation at TA=55
O
C with no thermal runaway
•
Exceeds environmental standards of MIL-S-19500/228
•
Ultra fast switching for high efficiency
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.107 (2.7)
.080 (2.0)
DIA.
1.0 (25.4)
MIN.
UF100G~UF1010G
DO-41
Unit:inch(mm)
MECHANICAL DATA
•
Case: Molded plastic, DO -41 GLASS PASSIVATION
•
Terminals: Axial leads, solderable per MIL-STD-202,
Method 208
•
Polarity: Band denotes cathode
•
Mounting Position: Any
•
Weight: 0.013 ounce, 0.3 gram
.034 (.86)
.028 (.71)
DIA.
.205 (5.2)
.160 (4.1)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
UF100G UF101G UF102G UF104G UF106G UF108G UF1010G
Peak Rev erse Volt age, Pepetitive ; V
RM
Maximum RMS Voltage
DC Bl ocki ng Voltage; VR
Average Forward Current, Io @T
A
=55
°C
3.8”
lead length, 60Hz, resistive or i nductive load
Peak Forward Surge Current IFM (surge)
8.3msec . single half sine- wave superimposed on rated load
(JEDEC method)
Maximum Forward Voltage V
F
@1.0A, 25
°C
Maxi mum Reverse Current, @ Rated T
J
=25
°C
Reverse Voltage T
J
=100
°C
Typi cal Junction capacitance (Note 1) CJ
Typi cal Junction Resi stance (Note 2) R JA
Reverse Recovery Time
I
F
=.5A, I
R
=1A, I
rr
=.25A
Operati ng and Storage Temperature Range
50
-55 to +150
1.00
1.30
5
100
17.0
60.0
75
1.50
1.70
V
µA
µA
pF
°C/W
ns
30.0
A
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
UNITS
V
V
V
A
°C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF100G~UF1010G
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
UF100G
TYPICAL
1
VERAGE FORWARD CURRENT, AMP
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
IFM, Apk
SINGLE PHASE
HALF WAVE 60Hz
RESISSTIVE OR
INDUCTIVE
LOAD .375" LEAD
LENGTHS
0.1
UF108G
TJ = 25
°C
0.01
0
.2
.4
.6
.8
1.0 1.2 1.4 1.6
100
125
150
175
FORWARD VOLTAGE-VFM(Vpk)
AMBIENT TEMPERATURE,
°C
Fig. 2-FORWARD CHARACTERISTICS
100
Fig. 3-FORWARD CURRENT DERATING CURVE
FORWARD SURGE CURRENT, AMPERES
35
30
25
20
15
10
5
JUNCTION CAPACITANCE, pF
TJ = 25
°C
f = 1.0MHz
Vsig = 50m Vp-p
10
1
0.1
1
10
100
.1
.5
1
2
5
10
20
50
100 200
500
REVERSE VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-PEAK FORWARD SURGE CURRENT
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REV.02 20110725
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