2SK2063-4100 datasheet, PDF - EEWORLD Datasheet

2SK2063-4100: DescriptionPower Field-Effect Transistor, 20A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size75KB，1 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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2SK2063-4100 Overview

Power Field-Effect Transistor, 20A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN

Parameter Name	Attribute value
Parts packaging code	SFM
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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