PJP168ACZ datasheet, PDF - EEWORLD Datasheet

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PJP168ACZ: DescriptionPower Bipolar Transistor, 18A I(C), 13V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size178KB，3 Pages; ManufacturerPromax-Johnton Electronic Corporation

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PJP168ACZ Overview

Power Bipolar Transistor, 18A I(C), 13V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

PJP168ACZ Parametric

Parameter Name	Attribute value
Maker	Promax-Johnton Electronic Corporation
Parts packaging code	SFM
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	18 A
Collector-emitter maximum voltage	13 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	90
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

PJP168ACZ Preview

PJP168A

PNP Epitaxial Silicon DarlingtonTransistor

MEDIUM PO WER LINEAR SWITCHING APPLICATIO NS

•

Collector current 18A

Collector dissipation Pc =100W (Tc = 25℃ )

TO-220

ORDERING INFORMATION

Device

PJP168ACZ

Operating Temperature

-20℃½+85℃

Package

TO-220

P in : 1. Base

2. Collector

3. Emitter

ABSOLUTE MAXIMUM RATINGS

(Ta = 25

℃

)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

Ic

Pc

Tj

Tstg

Rating

-20

-13

-7

-18

100

150

-55 ~150

Unit

V

A

W

℃

ELECTRICAL CHARACTERISTICS

(Ta = 25

℃

)

Characteristic

Collector-Base Breakdown Voltage

Collector-EmitterBreakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V

CE (SAT)

V

BE (SAT)

Test Condition

Ic = -1mA, I

E

= 0

Ic = -10mA, I

B

=0

I

E

= -1mA, I

C

= 0

V

CB

= -15V,I

E

=0

V

EB

= -3V,I

C

=0

V

CE

= -3V,I

C

=-10A

V

CE

= -3V,I

C

= -

15A

I

C

= -10A,I

B

= -1A

I

C

= -10A, V

CE

= -

4V

-0.7

-1.5

V

120

90

Min

-20

-13

-7

-100

Typ

Max

Unit

V

μA

1-3

2002/01.rev.A

PJP168A

PNP Epitaxial Silicon DarlingtonTransistor

DC CURRENT GAIN

COLLECTOR-BASE BREAKDOWN VOLTAGE

COLLECTOR-EMITTER BREAKDOWN VOLTAGE

COLLECTOR-EMITTER SATURATION VOLTAGE

2-3

2002/01.rev.A

PJP168A

PNP Epitaxial Silicon DarlingtonTransistor

3-3

2002/01.rev.A

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