Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4582
DESCRIPTION
·With
TO-3PML package
·High
voltage,high speed
·Switching
power transistor
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
600
450
7
15
30
6
12
75
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.67
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4582
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
CEO(SUS)
I
EBO
I
CBO
I
CEO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter sustaining voltage
Emitter cut-off current
Collector cut-off current
At rated voltage
Collector cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=7.5 A ; V
CE
=5V
I
C
=1mA ; V
CE
=5V
I
C
=1.5A ; V
CE
=10V
10
5
20
MHz
0.1
mA
CONDITIONS
I
C
=7.5A;I
B
=1.5 A
I
C
=7.5A;I
B
=1.5 A
I
C
=0.2A;I
B
=0
At rated voltage
450
0.1
MIN
TYP.
MAX
1.0
1.5
UNIT
V
V
V
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=7.5A;R
L
=20Ω
I
B1
=1.5A; I
B2
=3A
V
BB2
=4V
0.5
2.0
0.2
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4582
Fig.2 Outline dimensions
3
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