DMDT9922-7 datasheet, PDF - EEWORLD Datasheet

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DMDT9922-7: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; File Size44KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DMDT9922-7 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6

DMDT9922-7 Parametric

Parameter Name	Attribute value
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	300
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	170 MHz

DMDT9922-7 Preview

DMDT9922

PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR

Features

ADVANCE INFORMATION

Epitaxial Planar Die Construction

Low Noise

High Current Gain

Matched Pair of Transistors

SOT-363

Dim

B C

Min

0.10

1.15

2.00

0.30

1.80

0.90

0.25

0.10

Max

0.30

1.35

2.20

0.40

2.20

0.10

1.00

0.40

0.25

Mechanical Data

Case: SOT-363, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking: K3S

Weight: .006 grams (approx.)

KXX

0.65 Nominal

All Dimensions in mm

Maximum Ratings

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector-Collector Voltage

Emitter-Emitter Voltage

@ T

= 25°C unless otherwise specified

Symbol

CBO

CEO

EBO

CCO

EEO

qJA

, T

STG

DMDT9922

-50

-40

-5.0

-50

-100

200

625

-55 to +125

Unit

K/W

°C

Characteristic

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

R R

P O

P F

A T

N O

U N

DS30142 Rev. 2P-5

1 of 2

www.diodes.com

DMDT9922

Diodes Incorporated

Electrical Characteristics

@ T

= 25°C unless otherwise specified

ADVANCE INFORMATION

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Leakage Current

Emitter-Base Leakage Current

Collector-Emitter Leakage Current

ON CHARACTERISTICS (Note 2)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Impedance

Emitter-Base Offset Voltage

Change in Emitter-Base Offset Voltage vs. Collector-Base

Voltage (CMRR)

Change in Emitter-Base Offset Voltage vs.

Collector-Current

Average Offset Voltage Drift

Emitter-Base Offset Current

Change in Emitter-Base Offset Current vs. Collector-Base

Voltage

Average Offset Current Drift

Collector-Collector Leakage Current

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Output Conductance

Current Gain-Bandwidth Product

Notes:

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CES

CE(SAT)

OS/

TC V

OS/

TC I

obo

ibo

Min

-50

-40

-5.0

300

Typ

-0.3

-4

450

-0.1

-0.5

0.5

-4

Max

-500

-1000

555

-0.5

Unit

mV/°C

pA/°C

MHz

Test Condition

= -50mA, I

= 0

= -1.0mA, I

= 0

= -50mA, I

= 0

= -30V

= -4.0V

= -40V

= -1.0mA, V

= -6.0V

= -50mA, I

= -5.0mA

= -1mA, I

= -0.1mA

= -10mA to -1mA

= 0V, I

= -1mA to -1mA

= 0V, I

= -1mA to -1mA

= 0V, I

= -10mA to -1mA

= -10mA, V

= 0V

= 0 to -50V

= -10mA

= -40V

= -10V, f = 1.0MHz, I

= 0

= -0.5V, I

= 0, f = 1MHz

= -1mA, V

= -5V

= -12V, I

= -2.0mA,

f = 100MHz

170

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width

300ms, duty cycle

2%.

R R

P O

P F

A T

N O

U N

DS30142 Rev. 2P-5

2 of 2

www.diodes.com

DMDT9922

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