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D2209UK

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DT, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size36KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric Compare View All

D2209UK Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DT, 6 PIN

D2209UK Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMELAB
package instructionFLANGE MOUNT, O-CXFM-F6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CXFM-F6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

D2209UK Preview

TetraFET
D2209UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
D
(2 pls)
E
B
1
2
3
A
G
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
45W – 12.5V – 900MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H
I
F
M
K
J
N
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DT
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
GATE
SOURCE (COMMON)
• LOW NOISE
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
70W
40V
±20V
28A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5409
Issue 1
D2209UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 45W
V
DS
= 12.5V
f = 900MHz
V
DS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
I
DQ
= 1.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 2.8A
1
2.52
TBA
40
20:1
40
Typ.
Max. Unit
V
14
1
7
mA
µA
V
S
dB
%
168
140
14
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. TBA°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5409
Issue 1

D2209UK Related Products

D2209UK D2209UKG4
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DT, 6 PIN UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DT, 6 PIN
Is it lead-free? Contains lead Lead free
Is it Rohs certified? incompatible conform to
Maker SEMELAB SEMELAB
package instruction FLANGE MOUNT, O-CXFM-F6 FLANGE MOUNT, O-CXFM-F6
Contacts 6 6
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 40 V 40 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-CXFM-F6 O-CXFM-F6
Number of components 1 1
Number of terminals 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location UNSPECIFIED UNSPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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