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1N53

Description
SILICON, KA BAND, MIXER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size272KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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1N53 Overview

SILICON, KA BAND, MIXER DIODE

1N5391 THRU 1N5399
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· Construction utilizes void-free molded plastic technique
· High surge current capability
· 1.5A operation at T
L
=70℃ with no thermal runaway
· Low reverse leakage
· High forward surge current capability
· High temperature soldering guaranteed : 250℃/10 seconds,
0.375"(9.5mm) lead length, 5lbs.(2.3kg) tension
CURRENT 1.5 Amperes
VOLTAGE 50 to 1000 Volts
DO-15
0.140(3.6)
0.104(2.6)
DIA.
1.0(25.4)
MIN.
0.300(7.6)
0.230(5.8)
Mechanical Data
· Case : JEDEC DO-15 molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.014 ounce, 0.33 gram
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=70℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) at T
A
=70℃
Maximum instantaneous forward voltage
at 1.5A
Maximum reverse current
at rated DC blocking voltage
T
A
=25℃
T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
JA
JL
C
J
T
A
T
J
T
STG
1N 1N 1N 1N 1N 1N 1N 1N 1N
5391 5392 5393 5394 5395 5396 5397 5398 5399
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
50.0
1.4
5.0
50.0
50.0
25.0
20.0
+150.0
-65 to +175
500
350
500
600
420
600
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
℃/W
pF
Typical thermal resistance (Note 2)
Typical junction capacitance (Note 1)
Maximum DC Blocking Voltage Temperature
Operating and Storage temperature Range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted

1N53 Related Products

1N53 1N5396 1N5397 1N5398 1N5399 1N5395
Description SILICON, KA BAND, MIXER DIODE 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
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