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BYD17KTRL

Description
DIODE 0.6 A, 800 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size60KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYD17KTRL Overview

DIODE 0.6 A, 800 V, SILICON, SIGNAL DIODE, Signal Diode

BYD17KTRL Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LELF-R2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum output current0.6 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time3 µs
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD17 series
General purpose
controlled avalanche rectifiers
Product specification
Supersedes data of 1999 Nov 11
2001 Oct 26
[Review of Arteli Development Board AT32F421] 2. Use of peripheral ERTC
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