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1N5397G

Description
1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size125KB,4 Pages
ManufacturerTAITRON Components
Websitehttp://www.taitroncomponents.com/
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1N5397G Overview

1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15

1N5397G Parametric

Parameter NameAttribute value
MakerTAITRON Components
package instructionO-PALF-W2
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Reverse test voltage600 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
1.5A Glass Passivated Rectifiers
1N5391G
1N5399G
1.5A Glass Passivated Rectifiers
Features
Glass passivated chip junction
Low forward voltage drop
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed: 260°C/10 seconds
/.0375" (9.5mm) lead length, 5lbs (2.3kg) tension
RoHS compliance
DO-15
Mechanical Data
Case:
Epoxy:
Terminals:
Polarity:
Weight:
DO-15 molded plastic body
Plastic package has UL flammability classification 94V-0
Plated axial leads, solderable per MIL-STD-202E, Method 208C
Color band denotes cathode end
0.015 ounces, 0.4 gram
Maximum Ratings and Electrical Characteristics
(T
A
=25ºC unless noted otherwise)
Symbol
Description
Maximum Repetitive
Peak Reverse Voltage
Maximum RMS
Voltage
Maximum DC
Blocking Voltage
Maximum Average
Forward Rectified
Current
1N5391G
50
35
50
1N5392G
100
70
100
1N5393G
200
140
200
1N5395G
400
280
400
1.5
1N5397G
600
420
600
1N5398G
800
560
800
1N5399G
1000
700
1000
Unit
V
V
V
A
0.375”(9.5mm)
lead length at
T
A
=75° C
8.3ms single
half sine-wave
superimposed
on rated load
(JEDEC
Method)
I
F
=1.5 A
Conditions
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Peak Forward Surge
Current
50
A
V
F
Maximum
Instantaneous
Forward Voltage
1.1
V
TAITRON COMPONENTS INCORPORATED
www.taitroncomponents.com
Tel:
Fax:
(800)-TAITRON
(800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH 2008-04-24
Page 1 of 4

1N5397G Related Products

1N5397G 1N5398G 1N5399G
Description 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15
Maker TAITRON Components TAITRON Components TAITRON Components
Reach Compliance Code unknow unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-15 DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 600 V 800 V 1000 V
Maximum reverse current 5 µA 5 µA 5 µA
Reverse test voltage 600 V 800 V 1000 V
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL

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