DPS8M612-100M datasheet, PDF - EEWORLD Datasheet

DPS8M612-100M: DescriptionSRAM Module, 32KX16, 100ns, CMOS,; Categorystorage storage; File Size229KB，7 Pages; ManufacturerTwilight Technology Inc.

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DPS8M612-100M Overview

SRAM Module, 32KX16, 100ns, CMOS,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
package instruction	DIP, DIP40,.6
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-XDMA-T40
memory density	524288 bit
Memory IC Type	SRAM MODULE
memory width	16
Number of functions	1
Number of terminals	40
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX16
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0016 A
Minimum standby current	2 V
Maximum slew rate	0.33 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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