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1N5402

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size617KB,2 Pages
ManufacturerETC1
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1N5402 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage200 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
1N5400 THRU 1N5408
Reverse Voltage - 50 to 1000 Volts
GENERAL PURPOSE SILICON RECTIFIER
Forward Current - 3.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
DO-201AD
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
Case
: JEDEC DO-201AD molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.04 ounce, 1.10 grams
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
1N 1N
1N
1N
1N
1N 1N
1N
5400 5401 5402 5403 5404 5405 5406 5407 5408
UNITS
V
V
V
A
A
V
µA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
JA
T
J
,
T
STG
50
35
50
100 200 300 400 500
70 140 210 280 350
100 200 300 400 500
3.0
200
1.1
5.0
100
30.0
20.0
-65 to +150
600 800 1000
420 560 700
600 800 1000
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

1N5402 Related Products

1N5402 1N5400 1N5408
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
state DISCONTINUED ACTIVE CONSULT MFR
Diode type rectifier diode rectifier diode rectifier diode
Number of terminals 2 2 -
Number of components 1 1 -
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 -
packaging shape round round -
Package Size LONG FORM LONG FORM -
Terminal form Wire Wire -
terminal coating tin lead MATTE Tin -
Terminal location AXIAL AXIAL -
Packaging Materials Plastic/Epoxy Plastic/Epoxy -
structure single single -
Shell connection isolation isolation -
Diode component materials silicon silicon -
application GENERAL PURPOSE GENERAL PURPOSE -
Phase 1 1 -
Maximum repetitive peak reverse voltage 200 V 50 V -
Maximum average forward current 3 A 3 A -
Maximum non-repetitive peak forward current 200 A 200 A -
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