BL
FEATURES
GALAXY ELECTRICAL
1N6267- - -1N6303A
BREAKDOWN VOLTAGE: 6.8 --- 200 V
PEAK PULSE POWER: 1500 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
For devices with V
(BR)
10V,ID are typically less than 1.0μA
/ 10 seconds,
High tem perature soldering guaranteed:265
DO-201AE
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-201AE, molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Weight: 0.032 ounces,
0.9
grams
Mounting position: Any
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
Steady state pow er dissipation at T
L
=75
fffff
lead lengths 0.375"(9.5mm) (NOTE 2)
Peak forw ard surge current, 8.3ms single half
ffffsine-w
ave superimposed on rated load (JEDEC Method) (NOTE 3)
Maximum instantaneous forw ard voltage at
100
A for unidirectional only (NOTE 4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
VALUE
Minimum 1500
SEE TABLE 1
6.5
200.0
3.5/5.0
20
75
-50---+175
UNIT
W
A
W
A
V
/W
/W
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
200V, and V
F
=5.0 Volt max. for devices of V
(BR)
>200V
www.galaxycn.com
Document Number 0285011
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
PEAK PULSE POWER (P ) OR CURRENT
PP
1N6267- -
-1N6303A
FIG.1 -- PEAK PULSE POWER RATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN if FIG.3
T
A
=25
10
FIG.2 -- PULSE DERATING CURVE
DERATING IN PERCENTAGE, %
100
75
50
1.0
25
0.1
0.1μ
s
1.0μ
s
10μ
s
100μ
s
1ms
10ms
(I
PPM
)
tol, PULSE WIDTH, SEC.
0
0
25
50
75
100
125
150
175
200
FIG.3
-- PULSE WAVEFORM
150
PULES WIDTH (td)
is DEFINDE as the
POINT WHERE the
PEAK CURRENT
DECAYS to 50% of
I
PPM
TA, AMBIENT TEMPERATURE.
I
PPM
, PEAK PULSE CURRENT, %
tr=10¦
Μ
s ec
PEAK VALUE
I
PPM
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
H HHHHHHHH HUNIDIRECTIONAL
100
HALF VALUE - I
PPM
2
6.000
T
J
=25
f=1.0MH
Z
Vsig=50mVp-p
MEASURED at
ZEROBIAS
50
C
J
, JUNCTION CAPACITANCE, Pf
10/1000¦
Μ
s ec.
WAVEFORM as
DEFINDE by R.E.A.
10.000
td
0
0
1.0
2.0
3.0
4.0
t, TIME, ms
FIG.5 -- STEADY STATE POWER DERATING CURVE
P
M(AV)
, STRADY STATE POWER
1.00
1000
MEASURED at
STAND-OFF
VOLTAGE, V
WM
L=0.375"(9.5mm)
LEAD LENGTHS
DISSIPATION, W
0.75
60 H
Z
RESISTIVEOR
INDUCTIVE LOAD
10
1.0
10
100
200
0.50
0.25
1.6 x 1.6 x .040"
(40 x 40 x 1mm.)
COPPER HEAT SINKS
V
(BA)
, BREAKDOWN VOLTAGE, V
0
0
25
50
75
100
125
150
175
200
T
L
, LEAD TEMPERATURE,
I
D
, INSTANTANEOUS REVERSE
I
FSM
, PEAK FORWARD SURGE
FIG.7 -- TYPICAL REVERSE LEAKAGE
JJJJJJJJJJJJJJJJJJCHARACTERISTICS
1 .0 0 0
FIG.6 -- MAXIMUN NON-REPETITIVE FORWARD
HHHHHH HSURGE
CURRENT UNIDIRECTIONAL ONLY
200
LEAKAGE CURRENT,
mA
100
M E A S U R E D A T D E V IC E S
S T A N D -O F F V O L T A G E ,
V W M
CURRENT, A
100
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-MAVE
(JEDEC METHOD)
10
1
0 .1
T
A
= 25
℃
0 .0 1
0 .0 0 1
0
100
200
300
400
440
500
10
1
10
100
V
(BR)
, BREAKDOWN VOLTAGE, V
NUMBER OF CYCLES AT 60 Hz
www.galaxycn.com
Document Number 0285011
BL
GALAXY ELECTRICAL
4.
Microcontroller MCU
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