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1SS184T5LFT

Description
Ultra High-Speed Switching Applications
File Size180KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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1SS184T5LFT Overview

Ultra High-Speed Switching Applications

1SS184
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
Ultra High-Speed Switching Applications
Small package: SC-59
Low forward voltage: V
F (3)
= 0.9 V (typ.)
Fast reverse recovery time: t
rr
= 1.6 ns (typ.)
Small total capacitance: C
T
= 0.9 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300*
100*
2*
150
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5.
JEDEC
TO-236MOD
JEITA
SC-59
1-3G1F
TOSHIBA
Weight: 0.012 g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1 MHz
I
F
= 10 mA (Fig.1)
Min
Typ.
0.60
0.72
0.90
Max
Unit
1.20
0.1
0.5
3.0
4.0
μA
pF
ns
V
0.9
1.6
Marking
1
2008-11-18

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