2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
P-Channel JFETs
2N5114JAN/JANTX/JANTXV
2N5115JAN/JANTX/JANTXV
2N5116JAN/JANTX/JANTXV
PRODUCT SUMMARY
Part Number
2N5114
2N5115
2N5116
V
GS(off)
(V)
5 to 10
3 to 6
1 to 4
r
DS(on)
Max (W)
75
100
150
I
D(off)
Typ (pA)
–10
–10
–10
t
ON
Max (ns)
16
30
42
FEATURES
D
D
D
D
D
Low On-Resistance: 2N5114 <75
W
Fast Switching—t
ON
: 16 ns
High Off-Isolation—I
D(off)
: –10 pA
Low Capacitance: 6 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The 2N5114JAN/JANTX/JANTXV series consists of
p-channel JFET analog switches designed to provide low
on-resistance, good off-isolation, and fast switching. These
JFETs are optimized for use in complementary switching
applications with the Vishay Siliconix 2N4856A series.
TO-206AA
(TO-18)
S
1
2
G
Case
Top View
3
D
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 200_C
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 3 mW/_C above 25_C
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9-1
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5114
2N5115
2N5116
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Symbol
Test Conditions
Typ
a
Min Max Min
Max Min
Max Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
G
= 1
mA
, V
DS
= 0 V
V
DS
= –15 V, I
D
= –1 nA
V
DS
= –18 V
V
GS
= 0 V
V
DS
= –15 V
45
30
5
–30
10
–90
30
3
6
30
V
1
4
mA
pA
mA
–15
5
0.01
–5
–10
–10
–10
–0.02
–0.02
–0.02
–1.0
–0.7
–0.5
75
–0.7
–1
–1.3
–1
–500
500
1
–60
500
1
–5
–25
500
1
V
GS
= 20 V, V
DS
= 0 V
Gate Reverse Current
Gate Operating Current
c
I
GSS
I
G
T
A
= 150_C
V
DG
= –15 V, I
D
= –1 mA
V
GS
= 12 V
V
DS
= –15 V
Drain Cutoff Current
I
D(off)
V
DS
= –15 V
T
A
= 150_C
V
GS
= 7 V
V
GS
= 5 V
V
GS
= 12 V
V
GS
= 7 V
V
GS
= 5 V
I
D
= –15 mA
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= –7 mA
I
D
= –3 mA
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
DS(on)
V
GS(F)
V
GS
= 0 V, I
D
= –1 mA
I
G
= –1 mA , V
DS
= 0 V
–500
–500
pA
–1
–1
m
mA
–0.8
–0.6
100
–1
150
–1
V
W
V
Dynamic
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
r
ds(on)
C
iss
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
V
GS
= 12 V
C
rss
V
DS
= 0 V
f = 1 MHz
V
GS
= 7 V
V
GS
= 5 V
20
5
6
6
75
25
7
7
7
100
25
175
27
pF
W
Switching
Turn-On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
c. This parameter not registered with JEDEC.
See Switching Circuit
6
15
8
30
20
60
PSCIA
6
10
10
20
25
35
ns
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9-2
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
2N5114JAN/JANTX/JANTXV Series
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
2N5114
V
DD
V
GG
R
L
*
R
G
*
I
D(on)
V
GS(H)
V
GS(L)
*Non-inductive
–10 V
20 V
430
W
100
W
–15 mA
0V
–11 V
V
GG
–V
DD
2N5115
–6 V
12 V
910
W
220
W
–7 mA
0V
–7 V
2N5116
–6 V
8V
2000
W
390
W
–3 mA
0V
–5 V
51
W
1.2 kW
Sampling
Scope
51
W
51
W
V
GS(L)
V
GS(H)
0.1
mF
1.2 kW
R
L
R
G
7.5 kW
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
Document Number: 70261
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-3
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