SILICON EPITAXIAL
NPN TRANSISTOR
2N5154T2A
•
•
Hermetic Metal TO39 Package
High Reliability and Space Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
PD
PD
TJ
Tstg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
(1)
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 50°C
Total Power Dissipation at
Derate Above 50°C
Junction Temperature Range
Storage Temperature Range
100V
80V
5.5V
2A
10A
1W
5.71mW/°C
10W
66.67mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
R
θJA
(1)
Parameters
Thermal Resistance, Junction To Case
Thermal Resistance, Junction To Ambient
This value applies for Pw
≤
8.3ms, duty cycle
≤
1%.
Min.
Typ.
Max.
15
175
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9306
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON EPITAXIAL
NPN TRANSISTOR
2N5154T2A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
ICES
(2)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = 10mA
VCE = 60V
VCE = 100V
VCE = 60V
VBE = 0
VBE = 0
VBE = -2V
TC = 150°C
VCE = 40V
VEB = 4V
VEB = 5.5V
IC = 50mA
IB = 0
IC = 0
IC = 0
VCE = 5V
VCE = 5V
TC = -55°C
IC = 5A
VCE = 5V
VCE = 5V
IB = 250mA
IB = 500mA
IB = 250mA
IB = 500mA
Min.
80
Typ
Max.
Units
V
1.0
1.0
25
50
1.0
1.0
50
70
25
40
1.45
1.45
2.2
0.75
1.5
200
µA
mA
ICEX
ICEO
IEBO
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
µA
mA
hFE
(2)
Forward-current transfer
ratio
IC = 2.5A
-
VBE
(2)
Base-Emitter Voltage
(2)
IC = 2.5 A
IC = 2.5A
IC = 5A
IC = 2.5A
IC = 5A
VBE(sat)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
V
VCE(sat)
(2)
DYNAMIC CHARACTERISTICS
hfe
Magnitude of common-
emitter, small-signal short-
circuit, forward-current
transfer ratio
Small-Signal Current Gain
IC = 500mA
f = 20MHz
IC = 100mA
f = 1.0 KHz
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Turn-Off Time
VCB = 10V
f = 1.0MHz
VCC = 30V
IB1 = 500mA
IC = 5A
IB2 = - IB1
RL = 6Ω
0.5
1.4
0.5
1.5
µS
IE = 0
250
pF
VCE = 5V
50
-
VCE = 5V
1.2
-
hfe
Cobo
ton
ts
tf
toff
Notes
(2)
Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9306
Issue 1
Page 2 of 3
SILICON EPITAXIAL
NPN TRANSISTOR
2N5154T2A
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9306
Issue 1
Page 3 of 3
51mcu
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