DPS512S8P-10I datasheet, PDF - EEWORLD Datasheet

DPS512S8P-10I: DescriptionSRAM Module, 512KX8, 100ns, CMOS, CDMA32, 0.600 INCH, CERDIP-32; Categorystorage storage; File Size428KB，6 Pages; ManufacturerTwilight Technology Inc.

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DPS512S8P-10I Overview

SRAM Module, 512KX8, 100ns, CMOS, CDMA32, 0.600 INCH, CERDIP-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Twilight Technology Inc.
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T32
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00027 A
Minimum standby current	2 V
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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