DPS512S8P-10I datasheet, PDF - EEWORLD Datasheet

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DPS512S8P-10I: DescriptionSRAM Module, 512KX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32; Categorystorage storage; File Size136KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPS512S8P-10I Overview

SRAM Module, 512KX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32

DPS512S8P-10I Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
Parts packaging code	MODULE
package instruction	0.600 INCH, DIP-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-CDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00027 A
Minimum standby current	2 V
Maximum slew rate	0.11 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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DPS512S8P-10I Related Products

	DPS512S8P-10I	DPS512S8PLL-10I	DPS512S8P-15C
Description	SRAM Module, 512KX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 512KX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 512KX8, 150ns, CMOS, CDMA32, 0.600 INCH, DIP-32
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	MODULE	MODULE	MODULE
package instruction	0.600 INCH, DIP-32	DIP, DIP32,.6	DIP, DIP32,.6
Contacts	32	32	32
Reach Compliance Code	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	100 ns	100 ns	150 ns
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32
JESD-609 code	e0	e0	e0
memory density	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	32	32	32
word count	524288 words	524288 words	524288 words
character code	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C
Minimum operating temperature	-40 °C	-40 °C	-
organize	512KX8	512KX8	512KX8
Output characteristics	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	DIP32,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00027 A	0.00006 A	0.00018 A
Minimum standby current	2 V	2 V	2 V
Maximum slew rate	0.11 mA	0.08 mA	0.11 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
Maker	B&B Electronics Manufacturing Company	-	B&B Electronics Manufacturing Company

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