SRAM Module, 256KX4, 45ns, CMOS
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | B&B Electronics Manufacturing Company |
| package instruction | DIP, DIP40,.9 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 45 ns |
| Other features | CONFIGURABLE AS 64K X 16 |
| Spare memory width | 8 |
| I/O type | COMMON |
| JESD-30 code | R-XDMA-T40 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | SRAM MODULE |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 40 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX4 |
| Output characteristics | 3-STATE |
| Exportable | NO |
| Package body material | UNSPECIFIED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP40,.9 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.4 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 2.24 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
京公网安备 11010802033920号
EEWORLD
